AS4435S

AS4435S P-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 20mΩ@-10V -30V -11A 35mΩ@-4.5V Feature Application Advanced trench process technology Load Switch High Density Cell Design For Ultra Low Battery Switch On-Resistance Power management Circuit diagram Package SOP-8 Marking D D D D 4435 XXXXX S S S G Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150059 2013/03/08 2015/05/16 D 6 AS4435S P-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -11 A Pulsed Drain Current IDM -50 A Power Dissipation PD 3.1 W RθJA 40 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Thermal Resistance from Junction to Ambient ℃/W ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-30V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =-250µA -3 V Gate threshold voltage Drain-source on-resistance 1) 1) Forward transconductance RDS(on) gFS -30 V -1 VGS =-10V, ID =-9.1A 16 20 VGS =-4.5V, ID =-6.9A 21 35 VDS =-15V, ID =-9.1A mΩ 10 S 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 1600 VDS =-15V,VGS =0V,f =1MHz 350 300 30 VDS =-15V,VGS =-10V, ID =-9.1A Gate-Source Charge Qgs Gate-Drain Charge Qgd 8 Turn-on delay time td(on) 10 Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) pF 5.5 nC 15 VDD=-15V,VGS=-10V, ID =-1A,RGEN=6Ω nS 110 tf 70 Source-Drain Diode characteristics Diode Forward voltage VDS VGS =0V, IS=-2.1A -1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150059 2013/03/08 2015/05/16 D 6 AS4435S P-Channel Enhancement Mode MOSFET Typical Characteristics Page 3 Document ID Issued Date Revised Date Revision Page. AS-3150059 2013/03/08 2015/05/16 D 6 AS4435S P-Channel Enhancement Mode MOSFET Typical Characteristics Page 4 Document ID Issued Date Revised Date Revision Page. AS-3150059 2013/03/08 2015/05/16 D 6 AS4435S P-Channel Enhancement Mode MOSFET Typical Characteristics Page 5 Document ID Issued Date Revised Date Revision Page. AS-3150059 2013/03/08 2015/05/16 D 6 AS4435S P-Channel Enhancement Mode MOSFET SOP-8 Package Information Symbol Dimensions In Millimeters Min. Max. Dimensions In Inches Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° Page 6 Document ID Issued Date Revised Date Revision Page. AS-3150059 2013/03/08 2015/05/16 D 6