ASD2120D

ASD2120D 1200V,2A Silicon Carbide Schottky Diode Features • Ease of Paralleling • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behaviour • High temperature operation • High frequency operation Key Characteristics VRRM 1200 V IF, Tc≤156℃ 2 A QC 11 nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Motor drives • Solar application,UPS • Power Switching Circuits Part No. Package Type Marking ASD2120D TO-252-2 ASD2120D http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 1 Document ID Issued Date AS-3240018 2018/09/10 Revised Date / Revision Page A 5 1200V,2A Silicon Carbide Schottky Diode ASD2120D Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM 1200 V VRSM 1200 V VDC 1200 9 5 2 V 10 A 18 A 58 34 W W Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current IF IFRM IFSM Test Condition TC=25℃ TC=125℃ TC=156℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ A Power Dissipation PTOT Operating Junction Tj -55℃ to 175℃ ℃ Tstg -55℃ to 175℃ ℃ 1 8.8 Nm lbf-in Storage Temperature M3 Screw 6-32 Screw Mounting Torque Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Test Condition 2 Value Typ. Unit 1.96 ℃/W Document ID Issued Date AS-3240018 2018/09/10 Revised Date / Revision Page A 5 1200V,2A Silicon Carbide Schottky Diode ASD2120D Electrical Characteristics Parameter Symbol Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Numerical Typ. Max. 1.45 1.7 2.1 2.5 2 20 40 100 Test Conditions IF=2A, Tj=25℃ I F=2A, Tj=175℃ VR=1200V, Tj=25℃ VR=1200V, Tj=175℃ VR=800V, Tj=150℃ 11 - 136 150 VR=400V, Tj=25℃, f=1MHZ 11 12 VR=800V, Tj=25℃, f=1MHZ 8 9 VR Qc   C(V )dV 0 VR=0V, Tj=25℃, f=1MHZ C Total Capacitance Unit V µA nC pF Performance Graphs 1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj : 100 4.0 O Tj=25 C 3.5 80 O Tj=75 C 3.0 O Tj=125 C O Tj=175 C O Tj=25 C 60 IR (A) IF (A) 2.5 2.0 O Tj=75 C O Tj=125 C 40 O Tj=175 C 1.5 1.0 20 0.5 0 0.0 0.5 1.0 1.5 2.0 VF (V) 2.5 3.0 3.5 200 400 600 800 VR (V) 1000 1200 1400 1600 Figure 2. Reverse Characteristics Figure 1.Forward Characteristics http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 0 3 Document ID Issued Date AS-3240018 2018/09/10 Revised Date / Revision Page A 5 1200V,2A Silicon Carbide Schottky Diode ASD2120D 3) Current Derating 4) Capacitance vs. reverse voltage : 160 35 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 30 120 100 20 C (pF) IF(peak) (A) 25 140 15 80 60 10 40 5 0 20 25 50 75 100 125 150 0 175 0.1 1 TC(C) 10 100 1000 VR (V) Figure 4.Capacitance vs. Reverse Voltage Figure 3. Current Derating Package TO-252-2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 4 Document ID Issued Date AS-3240018 2018/09/10 Revised Date / Revision Page A 5 1200V,2A Silicon Carbide Schottky Diode ASD2120D DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE. Copyright ©2018 Anbon Semiconductor Company Ltd. All rights reserved. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 5 Document ID Issued Date AS-3240018 2018/09/10 Revised Date / Revision Page A 5