ASD3065A
650V,30A Silicon Carbide Schottky Diode
Features
• Ease of Paralleling
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behaviour
• High temperature operation
• High frequency operation
Key Characteristics
VRRM
650
V
IF, Tc≤155℃
30
A
QC
101
nC
Benefits
• Unipolar rectifier
• Substantially reduced switching losses
• No thermal run-away with parallel devices
• Reduced heat sink requirements
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Motor drives
• Solar application,UPS
• Power Switching Circuits
Part No.
ASD3065A
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FAX:+86-755-81482182
Package Type
Marking
TO-220-2
ASD3065A
1
Document ID
Issued Date
AS-3240015
2018/09/10
Revised Date
/
Revision
Page
A
5
650V,30A Silicon Carbide Schottky Diode
ASD3065A
Maximum Ratings
Parameter
Repetitive Peak Reverse
Voltage
Surge Peak Reverse
Voltage
DC Blocking Voltage
Symbol
Value
Unit
VRRM
650
V
VRSM
650
V
VDC
650
110
60
30
V
150
A
290
A
429
186
W
W
Continuous Forward
Current
Repetitive Peak Forward
Surge Current
Non-repetitive Peak
Forward Surge Current
IF
IFRM
IFSM
Test Condition
TC=25℃
TC=125℃
TC=155℃
TC=25℃, tp=10ms , Half Sine
Wave,D=0.3
TC=25℃, tp=10ms , Half Sine
Wave
TC=25℃
TC=110℃
A
Power Dissipation
PTOT
Operating Junction
Tj
-55℃ to 175℃
℃
Tstg
-55℃ to 175℃
℃
1
8.8
Nm
lbf-in
Storage Temperature
M3 Screw
6-32 Screw
Mounting Torque
Thermal Characteristics
Parameter
Symbol
Thermal resistance from
junction to case
Rth JC
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Test Condition
2
Value
Typ.
Unit
0.35
℃/W
Document ID
Issued Date
AS-3240015
2018/09/10
Revised Date
/
Revision
Page
A
5
650V,30A Silicon Carbide Schottky Diode
ASD3065A
Electrical Characteristics
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Total Capacitive Charge
QC
Test Conditions
IF=30A, Tj=25℃
IF=30A, Tj=175℃
VR=650V, Tj=25℃
VR=650V, Tj=175℃
VR=400V, Tj=150℃
101
-
VR=0V, Tj=25℃, f=1MHZ
2150
2300
VR=200V, Tj=25℃, f=1MHZ
188
191
VR=400V, Tj=25℃, f=1MHZ
183
184
VR
Qc
0
Total Capacitance
C
Numerical
Typ.
Max.
1.46
1.7
1.8
2.5
10
50
20
100
C(V )dV
Unit
V
µA
nC
pF
Performance Graphs
1) Forward IV characteristics as a function of Tj :
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FAX:+86-755-81482182
2) Reverse IV characteristics as a function of Tj :
3
Document ID
Issued Date
AS-3240015
2018/09/10
Revised Date
/
Revision
Page
A
5
650V,30A Silicon Carbide Schottky Diode
ASD3065A
3) Current Derating
4) Capacitance vs. reverse voltage :
Package TO-220-2
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
4
Document ID
Issued Date
AS-3240015
2018/09/10
Revised Date
/
Revision
Page
A
5
650V,30A Silicon Carbide Schottky Diode
ASD3065A
DISCLAIMER
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT
TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY,
FUNCTION OR DESIGN OR OTHERWISE.
Copyright ©2018 Anbon Semiconductor Company Ltd.
All rights reserved.
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
5
Document ID
Issued Date
FM-3240015
2018/09/10
Revised Date
/
Revision
Page
A
5
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