ASD1065A

ASD1065A 650V,10A Silicon Carbide Schottky Diode Features • Ease of Paralleling • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behaviour • High temperature operation • High frequency operation Key Characteristics VRRM 650 V IF, Tc≤150℃ QC 10 A 24 nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Motor drives • Solar application,UPS • Power Switching Circuits Part No. Package Type ASD1065A TO-220-2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 1 Marking ASD1065A Document ID Issued Date AS-3240008 2018/09/10 Revised Date / Revision Page A 5 ASD1065A 650V,10A Silicon Carbide Schottky Diode Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM 650 V VRSM 650 V VDC 650 29 14 10 V 70 A 92 A 139 60 W W Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current IF IFRM IFSM Test Condition TC=25℃ TC=135℃ TC=150℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ A Power Dissipation PTOT Operating Junction Tj -55℃ to 175℃ ℃ Tstg -55℃ to 175℃ ℃ 1 8.8 Nm lbf-in Storage Temperature M3 Screw 6-32 Screw Mounting Torque Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Test Condition 2 Value Typ. Unit 1.16 ℃/W Document ID Issued Date AS-3240008 2018/09/10 Revised Date / Revision Page A 5 ASD1065A 650V,10A Silicon Carbide Schottky Diode Electrical Characteristics Parameter Symbol Forward Voltage VF Reverse Current IR Total Capacitive Charge QC IF=10A, Tj=25℃ IF=10A, Tj=175℃ VR=650V, Tj=25℃ VR=650V, Tj=175℃ VR=400V, Tj=150℃ 24 - VR=0V, Tj=25℃, f=1MHZ 480 550 VR=200V, Tj=25℃, f=1MHZ VR=400V, Tj=25℃, f=1MHZ 50 35 55 40 VR Qc   0 C Total Capacitance Numerical Typ. Max. 1.45 1.7 1.7 2.5 1 20 5 50 Test Conditions C(V )dV Unit V µA nC pF Performance Graphs 1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj : 20 50 O Tj=25 C O 40 Tj=75 C 15 o Tj=25 C O Tj=125 C o O Tj=75 C 30 10 IR (A) IF (A) Tj=175 C o Tj=125 C o Tj=175 C 20 5 10 0 0 1 2 3 0 4 VF (V) 200 400 600 800 1000 VR (V) Figure 2. Reverse Characteristics Figure 1.Forward Characteristics http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 0 3 Document ID Issued Date AS-3240008 2018/09/10 Revised Date / Revision Page A 5 ASD1065A 650V,10A Silicon Carbide Schottky Diode 3) Current Derating 4) Capacitance vs. reverse voltage : 500 100 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 80 400 300 C (pF) IF(peak) (A) 60 40 100 20 0 200 0 25 50 75 100 125 150 175 0.1 1 TC ℃ 10 100 VR (V) 1000 Figure 4.Capacitance vs. Reverse Voltage Figure 3.Current Derating Package TO-220-2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 4 Document ID Issued Date AS-3240008 2018/09/10 Revised Date / Revision Page A 5 ASD1065A 650V,10A Silicon Carbide Schottky Diode DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE. Copyright ©2018 Anbon Semiconductor Company Ltd. All rights reserved. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 5 Document ID Issued Date AS-3240008 2018/09/10 Revised Date / Revision Page A 5