AS160-M

AS120-M THRU AS1200-M 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Package outline Features • Low profile surface mounted application in order to SOD-123 optimize board space • Tiny plastic SMD package • Low power loss, high efficiency • High current capability, low forward voltage drop • High surge capability • Silicon epitaxial planar chip, metal silicon junction • Lead-free parts meet RoHS requirements • Suffix "-H" indicates Halogen free parts, ex. AS120-Μ-H 0.154(3.9) 0.138(3.5) 0.012(0.3) Typ. 0.075(1.9) 0.060(1.5) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123 / MINI SMA • Terminals :Plated terminals, solderable per MIL-STD-750, 0.067(1.7) 0.051(1.3) 0.028(0.7) Typ. 0.028(0.7) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.018 gram Dimensions in inches and (millimeters) Maximum ratings and Electrical characteristics (AT PARAMETER T A =25 o C unless otherwise noted) Symbol CONDITIONS Forward rectified current See Fig.1 Forward surge current 8.3ms single half sine-wave (JEDEC methode) MIN. TYP. V R = V R R M T J = 100 O C Junction to ambient Thermal resistance 1.0 A IFSM 30 A Diode junction capacitance f=1MHz and applied 4V DC reverse voltage Storage temperature *4 VF (V) Operating temperature T J , ( O C) 0.50 -55 to +125 V R M S*2 (V) *3 VR (V) AS120-M 20 14 20 AS130-M 30 21 30 AS140-M 40 28 40 AS150-M 50 35 50 AS160-M 60 42 60 AS180-M 80 56 80 AS1100-M 100 70 100 AS1150-M 150 105 150 0.90 AS1200-M 200 140 200 0.92 mA 10 92 RθJC 46 CJ 120 O C/W O C/W pF O +175 -65 TSTG *1 VRRM (V) SYMBOLS 0.5 IR RθJA Junction to case UNIT IO O V R = V R R M T J = 25 C Reverse current MAX. C *1 Repetitive peak reverse voltage *2 RMS voltage 0.70 0.85 *3 Continuous reverse voltage -55 to +150 Page 1 *4 Maximum forward voltage@I F =1.0A Document ID Issued Date AS-121613 2008/02/10 Revised Date 2011/01/17 Revision E Page. 3 Rating and characteristic curves (AS120-M THRU AS1200-M) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD 50 1.0 80 100 120 140 160 180 200 LEAD TEMPERATURE,(°C) PEAK FORWARD SURGE CURRENT,(A) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0V V V 00 ~2 1.0 0 15 TJ=25 C Pulse Width 300us 1% Duty Cycle 0.1 8.3ms Single Half TJ=25 C Sine Wave .01 JEDEC method .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 20V~40V 50V~200V NUMBER OF CYCLES AT 60Hz 10 REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE 350 JUNCTION CAPACITANCE,(pF) 00 -M 60 ~1 00 M 40 ~4 12 0- 20 0V AS 14 0 3.0 80 M~ AS 0 20 0- M~ 0.2 ~6 15 0- 0.4 10 50 AS 12 0.6 INSTANTANEOUS FORWARD CURRENT,(A) 0.8 AS AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 1.2 300 250 200 150 100 TJ=100°C 1.0 0.1 TJ=25°C 0.01 50 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) Page 2 Document ID Issued Date AS-121613 2008/02/10 Revised Date 2011/01/17 Revision E Page. 3 AS120-M THRU AS1200-M 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Marking Type number Marking code AS120-M AS130-M AS140-M AS150-M AS160-M AS180-M AS1100-M AS1150-M AS1200-M 12 13 14 15 16 18 10 115 120 Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE A B C SOD-123 0.075 (1.90) 0.055 (1.40) 0.075 (1.90) Page 3 Document ID Issued Date AS-121613 2008/02/10 Revised Date 2011/01/17 Revision E Page. 3