AS2302

AS2302 N-Channel 20V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 2. SOURCE 3. DRAIN MARKING: A2 Maximum ratings (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Symbol 符號 Max 最大值 Unit 單位 Drain-Source Voltage 漏極-源極電壓 BVDSS 20 V Gate- Source Voltage 栅極-源極電壓 VGS +10 V Drain Current (continuous) 漏極電流-連續 ID 3.5 A Drain Current (pulsed) 漏極電流-脉冲 IDM 11 A Total Device Dissipation 總耗散功率 TA=25℃環境溫度爲 25℃ PD 1000 mW Junction 結溫 TJ 150 ℃ Storage Temperature 儲存溫度 Tstg -55to+150 ℃ http://www.anbonsemi.com TEL:886-755-23776891 FAX: 886-755-81482182 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150032 2003/03/08 2012/05/16 D 3 AS2302 N-Channel 20V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETS Electrical characteristics (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Symbol 符號 Min 最小值 Typ 典型值 Max 最大值 Unit 單位 Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID = 250uA,VGS=0V) BVDSS 20 — — V Gate Threshold Voltage 栅極開启電壓(ID = 250uA,VGS= VDS) VGS(th) 0.5 — 1.5 V Diode Forward Voltage Drop 内附二極管正向壓降(IS= 0.75A,VGS=0V) VSD — — 1.5 V Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= 16V) (VGS=0V, VDS= 16V, TA=55℃) IDSS — — 1 10 uA Gate Body Leakage 栅極漏電流(VGS=+10V, VDS=0V) IGSS — — +100 nA RDS(ON) — — 60 80 mΩ Input Capacitance 輸入電容 (VGS=0V, VDS= 10V,f=1MHz) CISS — — 800 pF Common Source Output Capacitance 共源輸出電容(VGS=0V, VDS= 10V,f=1MHz) COSS — — 200 pF Turn-ON Time 开启時間 (VDS= 10V, ID= 3.5A, RGEN=10Ω) t(on) — — 20 ns Turn-OFF Time 关断時間 (VDS= 10V, ID= 3.5A, RGEN=10Ω) t(off) — — 80 ns Static Drain-Source On-State Resistance 静态漏源導通電阻(ID=2.8A,VGS=4.5V) (ID=2A,VGS=2.5V) Pulse Width