ASD2065P2
650V,20A Silicon Carbide Schottky Diode
Features
• Ease of Paralleling
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behaviour
• High temperature operation
• High frequency operation
Key Characteristics
VRRM
650
V
IF, Tc≤157℃
20**
A
QC
72**
nC
CASE
Benefits
• Unipolar rectifier
• Substantially reduced switching losses
• No thermal run-away with parallel devices
• Reduced heat sink requirements
1 2
3
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Motor drives
• Solar application,UPS
• Power Switching Circuits
Part No.
Package Type
ASD2065P2
TO-247-3
Marking
ASD2065P2
* Per Leg, ** Per Device
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
1
Document ID
Issued Date
AS-3240014
2018/09/10
Revised Date
/
Revision
Page
A
5
650V,20A Silicon Carbide Schottky Diode
ASD2065P2
Maximum Ratings
Parameter
Repetitive Peak Reverse
Voltage
Surge Peak Reverse
Voltage
DC Blocking Voltage
Symbol
Value
Unit
VRRM
650
V
VRSM
650
V
VDC
650
40*/80**
27*/54**
10*/20**
V
Continuous Forward
Current
Repetitive Peak Forward
Surge Current
Non-repetitive Peak
Forward Surge Current
IF
IFRM
IFSM
TC=25℃
TC=100℃
TC=157℃
TC=25℃, tp=10ms , Half Sine
Wave,D=0.3
TC=25℃, tp=10ms , Half Sine
Wave
TC=25℃
TC=110℃
A
50*/100**
A
120*/240**
A
167*
71*
W
W
Tj
-55℃ to 175℃
℃
Tstg
-55℃ to 175℃
℃
1
8.8
Nm
lbf-in
Power Dissipation
PTOT
Operating Junction
Storage Temperature
Test Condition
M3 Screw
6-32 Screw
Mounting Torque
Thermal Characteristics
Parameter
Symbol
Thermal resistance from
junction to case
Rth JC
Test Condition
Value
Typ.
Unit
0.91*/0.45**
℃/W
* Per Leg, ** Per Device
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
2
Document ID
Issued Date
AS-3240014
2018/09/10
Revised Date
/
Revision
Page
A
5
650V,20A Silicon Carbide Schottky Diode
ASD2065P2
Electrical Characteristics (Per Leg)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Total Capacitive Charge
QC
Test Conditions
IF=10A, Tj=25℃
IF=10A, Tj=175℃
VR=650V, Tj=25℃
VR=650V, Tj=175℃
VR=400V, Tj=150℃
36
-
VR=0V, Tj=25℃, f=1MHZ
690
730
VR=200V, Tj=25℃, f=1MHZ
72
75
VR=400V, Tj=25℃, f=1MHZ
71
74
VR
Qc
0
Total Capacitance
C
Numerical
Typ.
Max.
1.45
1.7
1.7
2.5
10
50
20
100
C(V )dV
Unit
V
µA
nC
pF
Performance Graphs (Per Leg)
1) Forward IV characteristics as a function of Tj :
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
2) Reverse IV characteristics as a function of Tj :
3
Document ID
Issued Date
AS-3240014
2018/09/10
Revised Date
/
Revision
Page
A
5
650V,20A Silicon Carbide Schottky Diode
ASD2065P2
3) Current Derating
4) Capacitance vs. reverse voltage :
Package TO-247-3
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
4
Document ID
Issued Date
AS-3240014
2018/09/10
Revised Date
/
Revision
Page
A
5
650V,20A Silicon Carbide Schottky Diode
ASD2065P2
DISCLAIMER
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT
TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY,
FUNCTION OR DESIGN OR OTHERWISE.
Copyright ©2018 Anbon Semiconductor Company Ltd.
All rights reserved.
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
5
Document ID
Issued Date
AS-3240014
2018/09/10
Revised Date
/
Revision
Page
A
5
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