AS3401

AS3401 P-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 55mΩ@-10V -30V 68mΩ@-4.5V -4.4A 96mΩ@-2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking 3401. Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150010 2003/03/08 2022/01/20 F 5 AS3401 P -Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.4 A Pulsed Drain Current IDM -27 A Power Dissipation PD 1.2 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-30V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±12V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =-250µA -1.4 V Gate threshold voltage Drain-source on-resistance 1) RDS(on) -30 V -0.6 VGS =-10V, ID =-4.4A 55 VGS =-4.5V, ID =-4.0A 68 VGS =-2.5V, ID =-2.0A 96 mΩ 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 680 VDS =-15V,VGS =0V,f =1MHz 105 68 7.2 VDS =-15V,VGS =-10V, ID =-4.4A Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.6 Turn-on delay time td(on) 15 Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time pF 1.2 nC 63 VDD=-15V, VGS =-10V, ID =-1A RGEN=2.5Ω nS 21 tf 12 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS VGS =0V, IS=-4.4A -4.4 A -1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150010 2003/03/08 2022/01/20 F 5 AS3401 P-Channel Enhancement Mode MOSFET Typical Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance Page 3 Document ID Issued Date Revised Date Revision Page. AS-31500 010 2003/03/08 2022/01/20 F 5 AS3401 P-Channel Enhancement Mode MOSFET Typical Characteristics Figure7. Safe Operation Area Figure8. Switching wave Page 4 Document ID Issued Date Revised Date Revision Page. AS-31500 010 2003/03/08 2022/01/20 F 5 AS3401 P-Channel Enhancement Mode MOSFET SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.200 0.003 0.008 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP. 1.800 L L1 2.000 0.071 0.550 REF. 0.300 0.100 0.037 0. TYP. 0.079 0. 0.022 REF. 0.500 Page 5 0.012 0.020 Document ID Issued Date Revised Date Revision Page. AS-31500 010 2003/03/08 2022/01/20 F 5