ASD10120C

ASD10120C 1200V,10A Silicon Carbide Schottky Diode Features • Ease of Paralleling • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behaviour • High temperature operation • High frequency operation Key Characteristics VRRM 1200 V IF, Tc≤140℃ 10 A QC 50 nC CASE Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Motor drives • Solar application,UPS • Power Switching Circuits Part No. ASD10120C http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Package Type TO-247-2 1 Marking ASD10120C Document ID Issued Date AS-3240022 2018/09/10 Revised Date / Revision Page A 5 1200V,10A Silicon Carbide Schottky Diode ASD10120C Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM 1200 V VRSM 1200 V VDC 1200 29 14 10 V 50 A 70 A 139 60 W W Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current IF IFRM IFSM Test Condition TC=25℃ TC=125℃ TC=140℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ A Power Dissipation PTOT Operating Junction Tj -55℃ to 175℃ ℃ Storage Temperature Tstg -55℃ to 175℃ ℃ 1 8.8 Nm lbf-in M3 Screw 6-32 Screw Mounting Torque Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Test Condition 2 Value Typ. Unit 0.96 ℃/W Document ID Issued Date AS-3240022 2018/09/10 Revised Date / Revision Page A 5 1200V,10A Silicon Carbide Schottky Diode ASD10120C Electrical Characteristics Parameter Symbol Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Numerical Typ. Max. 1.5 1.7 3 2.2 10 50 50 300 Test Conditions IF=10A, Tj=25℃ IF=10A, Tj=175℃ VR=1200V, Tj=25℃ VR=1200V, Tj=175℃ VR=800V, Tj=150℃ 50 - 610 690 VR=400V, Tj=25℃, f=1MHZ 46 50 VR=800V, Tj=25℃, f=1MHZ 40 43 VR Qc   0 C(V )dV VR=0V, Tj=25℃, f=1MHZ C Total Capacitance Unit V µA nC pF Performance Graphs 1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj : 16 100 O 14 Tj=25 C 12 Tj=75 C O o Tj=25 C O Tj=125 C 10 o O Tj=175 C Tj=75 C 60 8 IR (A) IF (A) 80 6 o Tj=125 C o Tj=175 C 40 4 20 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 VF (V) 300 600 900 1200 1500 VR (V) Figure 1.Forward Characteristics http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 0 Figure2. Reverse Characteristics 3 Document ID Issued Date AS-3240022 2018/09/10 Revised Date / Revision Page A 5 1200V,10A Silicon Carbide Schottky Diode ASD10120C 3) Current Derating 4) Capacitance vs. reverse voltage : 100 800 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 80 700 600 500 C (pF) IF(peak) (A) 60 40 400 300 200 20 100 0 25 50 75 100 125 150 0 175 TC ℃ Figure 3.Current Derating 0.1 1 10 100 VR (V) 1000 Figure 4.Capacitance vs. Reverse Voltage Package TO-247-2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 4 Document ID Issued Date AS-3240022 2018/09/10 Revised Date / Revision Page A 5 1200V,10A Silicon Carbide Schottky Diode ASD10120C DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE. Copyright ©2018 Anbon Semiconductor Company Ltd. All rights reserved. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 5 Document ID Issued Date AS-3240022 2018/09/10 Revised Date / Revision Page A 5