BSS84

BSS84 P-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 8Ω@-10V -50V -0.13A 10Ω@-4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter  Battery−powered products Circuit diagram Package SOT-23 Marking B84 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150048 2003/03/08 2021/10/13 F 4 BSS84 P-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -0.13 A Pulsed Drain Current IDM -0.52 A Power Dissipation PD 0.225 W RθJA 556 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Thermal Resistance Junction to Ambient ℃/W ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-50V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =-250µA -2.5 V Gate threshold voltage Drain-source on-resistance 1) RDS(on) -50 -0.8 V -1.5 VGS =-10V, ID =-0.15A 8 VGS =-4.5V, ID =-0.15A 10 Ω 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 5 Turn-on delay time td(on) 2.5 Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time 30 VDS =-30V,VGS =0V,f =1MHz 10 pF 1 VDD=-30V,VGS=-4.5V, ID =-0.15A,RGEN=2.53Ω nS 16 tf 8 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS VGS =0V, IS=-0.13A -0.13 A -1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150048 2003/03/08 2021/10/13 F 4 BSS84 P-Channel Enhancement Mode MOSFET Typical Characteristics http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 3 Document ID Issued Date Revised Date Revision Page. AS-3150048 2003/03/08 2021/10/13 F 4 BSS84 P-Channel Channel Enhancement Mode MOSFET SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP. 1.800 L L1 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 2.000 0.071 0.550 REF. 0.300 0.100 0. 0.037 TYP. 0.079 0. 0.022 REF. 0.500 Page 4 0.012 0.020 Document ID Issued Date Revised Date Revision Page. AS-31500 048 2003/03/08 2021/10/13 F 4