AS6385

AO6385 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 1. GATE 2. SOURCE 3. DRAIN MARKING: 6 38 5 ■ Maximum ratings (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Symbol 符號 Rate 額定值 Unit 單位 Drain-Source Voltage 漏極-源極電壓 BVDSS -60 V Gate- Source Voltage 栅極-源極電壓 VGS +20 V Drain Current (continuous) 漏極電流-連續 ID -3.5 A Drain Current (pulsed) 漏極電流-脉冲 IDM -10 A Total Device Dissipation 總耗散功率 TA=25℃環境溫度爲 25℃ PD 1400 mW Junction 結溫 TJ 150 ℃ Storage Temperature 儲存溫度 Tstg -55to+150 ℃ http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150027 2003/03/08 2012/05/16 D 3 AO6385 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS ■ Maximum ratings (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Symbol 符號 Min 最小值 Typ 典型值 Max 最大值 Unit 單位 Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID = -250uA,VGS=0V) BVDSS -55 -60 — V Gate Threshold Voltage 栅極開启電壓(ID = -250uA,VGS= VDS) VGS(th) -1 — -3 V Diode Forward Voltage Drop 内附二極管正向壓降(IS= -2A,VGS=0V) VSD — — -1.2 V Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= -60V) IDSS — — -1 uA Gate Body Leakage 栅極漏電流(VGS=+20V, VDS=0V) IGSS — — +100 nA Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -3A,VGS= -10V) RDS(ON) — 70 85 mΩ Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -2A,VGS= -4.5V) RDS(ON) — 80 120 mΩ Input Capacitance 輸入電容 (VGS=0V, VDS= -15V,f=1MHz) CISS — 900 — pF Output Capacitance 輸出電容 (VGS=0V, VDS= -15V,f=1MHz) COSS — 100 — pF Turn-On Delay Time 開启延迟時間 (VDS=-30V, ID=-1A, RGEN=3Ω,VGS=-10V) td(on) — 38 — ns Turn-On Rise Time 開启上升時間 (VDS=-30V, ID=-1A, RGEN=3Ω,VGS=-10V) tr — 18 — ns Turn-Off Delay Time 關断延迟時間 (VDS=-30V, ID=-1A, RGEN=3Ω,VGS=-10V) td(off) — 51 — ns Turn-On Fall Time 開启下降時間 (VDS=-30V, ID=-1A, RGEN=3Ω,VGS=-10V) tf — 6 — ns Pulse Width