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AS2318

AS2318

  • 厂商:

    ANBON(安邦)

  • 封装:

    SOT23

  • 描述:

    AS2318

  • 数据手册
  • 价格&库存
AS2318 数据手册
AS2318 N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 45mΩ@10V 40V 5A 60mΩ@4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Circuit diagram Package SOT-23 Marking 4005. Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150071 2003/03/08 2015/05/16 D 3 AS2318 N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 5 A Pulsed Drain Current IDM 20 A Power Dissipation PD 1.2 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =40V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage Drain-source on-resistance 1) RDS(on) 40 V 1.0 1 µA ±100 nA 2.5 V VGS =10V, ID =5A 45 VGS =4.5V, ID =3A 60 mΩ 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 490 VDS =20V,VGS =0V,f =1MHz 92 68 5.2 VDS =20V,VGS =10V, ID =3.5A Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.3 Turn-on delay time td(on) 13 Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time pF 0.9 nC 52 VDD=20V, VGS =10V, RGEN=3Ω, RL=25Ω nS 17 tf 10 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS VGS =0V, IS=5A 5 A 1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150071 2003/03/08 2015/05/16 D 3 AS2318 N-Channel Channel Enhancement Mode MOSFET SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP. 1.800 L L1 2.000 0.071 0.550 REF. 0.300 0.100 0. 0.037 TYP. 0.079 0. 0.022 REF. 0.500 Page 3 0.012 0.020 Document ID Issued Date Revised Date Revision Page. AS-31500 071 2003/03/08 2015/05/16 D 3
AS2318 价格&库存

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AS2318
    •  国内价格
    • 1+0.38550

    库存:10