ASD40120P2

ASD40120P2 1200V,40A Silicon Carbide Schottky Diode Features • Ease of Paralleling • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behaviour • High temperature operation • High frequency operation Key Characteristics VRRM 1200 V IF, Tc≤138℃ 40** A QC 200** nC CASE Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements 1 2 3 Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Motor drives • Solar application,UPS • Power Switching Circuits Part No. Package Type ASD40120P2 TO-247-3 Marking ASD40120P2 * Per Leg, ** Per Device http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 1 Document ID Issued Date AS-3240027 2018/09/10 Revised Date / Revision Page A 5 1200V,40A Silicon Carbide Schottky Diode ASD40120P2 Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM 1200 V VRSM 1200 V VDC Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current IF IFRM IFSM Test Condition 1200 53*/106** 27*/54** 40*/80** TC=25℃ TC=125℃ TC=138℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ V A 100*/200** A 250*/500** A 233* 104* W W Power Dissipation PTOT Operating Junction Tj -55℃ to 175℃ ℃ Tstg -55℃ to 175℃ ℃ 1 8.8 Nm lbf-in Storage Temperature M3 Screw 6-32 Screw Mounting Torque Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC Test Condition Value Typ. Unit 0.62*/0.31** ℃/W * Per Leg, ** Per Device http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 2 Document ID Issued Date AS-3240027 2018/09/10 Revised Date / Revision Page A 5 1200V,40A Silicon Carbide Schottky Diode ASD40120P2 Electrical Characteristics (Per Leg) Parameter Symbol Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Test Conditions IF=20A, Tj=25℃ IF=20A, Tj=175℃ VR=1200V, Tj=25℃ VR=1200V, Tj=175℃ VR=800V, Tj=150℃ 100 - VR=0V, Tj=25℃, f=1MHZ 1500 1580 VR=400V, Tj=25℃, f=1MHZ 98 100 VR=800V, Tj=25℃, f=1MHZ 97 99 VR Qc   0 Total Capacitance C Numerical Typ. Max. 1.5 1.7 2.3 3 10 50 20 100 C(V )dV Unit V µA nC pF Performance Graphs (Per Leg) 2) Reverse IV characteristics as a function of Tj : 1) Forward IV characteristics as a function of Tj : http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 3 Document ID Issued Date AS-3240027 2018/09/10 Revised Date / Revision Page A 5 ASD40120P2 1200V,40A Silicon Carbide Schottky Diode 3) Current Derating 4) Capacitance vs. reverse voltage : Package TO-247-3 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 4 Document ID Issued Date AS-3240027 2018/09/10 Revised Date / Revision Page A 5 1200V,40A Silicon Carbide Schottky Diode ASD40120P2 DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE. Copyright ©2018 Anbon Semiconductor Company Ltd. All rights reserved. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 5 Document ID Issued Date AS-3240027 2018/09/10 Revised Date / Revision Page A 5