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BAV99W

BAV99W

  • 厂商:

    ANBON(安邦)

  • 封装:

    SOT323

  • 描述:

    BAV99W

  • 数据手册
  • 价格&库存
BAV99W 数据手册
BAV99W/BAL99W BAS16W/BAV70W/BAW56W 200mW Surface Mount Switching Diode- 75V Package outline Features • Fast speed switching. • For general purpose switching application. • High conductance. • Silicon epitaxial planar chip. • Lead-free parts meet RoHS requirments. • Suffix "-H" indicates Halogen-free parts, ex. ΒΑS16W-H. 0.016 (0.40) (B) 0.012 (0.30) .056(1.40) .048(1.20) 0.088 (2.20) 0.072 (1.80) 0.026 (0.65)Max SOT-323 (C) (A) 0.054 (1.35) 0.017 (0.42)Min. 0.046 (1.15) 0.096 (2.40) Mechanical data 0.010(0.25) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-323 • Terminals : Solder plated, solderable per 0.004 (0.10) 0.080 (2.00) 0.040 (1.00) 0.032 (0.80) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.006 gram Dimensions in inches and (millimeters) Maximum ratings and Electrical Characteristics (AT PARAMETER Symbol BAS16W Maximum Reverse Voltage o T A=25 C unless otherwise noted) BAV70W BAW56W BAV99W VR Maximum Forward Current IF Maximum Peak Forward Surge Current I FM 1 Total Device Dissipation FR-5 O Board* , T A = 25 C 215 Total Device Dissipation mA mA 500 PD mW 200 mW/ OC 1.6 Maximum Thermal Resistance Junction to Ambient (Note 1) O Substrate* , T A = 25 C R θJA 625 PD 300 O Derate Above 25 C O R θJA Operating Junction Temperature Range TJ Storage Temperature Range mW/ OC at V R = 70V at V R = 25V, T J =150 OC IR O 417 T STG Maximum Reverse Voltage Leakage Current at V R = 75V o C -65 to +150 o C 1.0 - - - - 2.5 2.5 2.5 2.5 30.0 - - 30.0 60.0 30.0 30.0 50.0 - - - at V R = 70V, T J =150 OC - 100.0 50.0 50.0 50.0 2.0 1.5 2.0 1.5 1.5 Maximum Reverse Recovery Time(I F = I R = 10mA,V R = 5.0Vdc, I R(REC) = 1.0mAdc, R L = 100 OHM) Maximum Forward Voltage at I F = 1.0mAdc at I F = 10mAdc at I F = 50mAdc CD C/W -65 to +150 at V R = 75V, T J =150 OC Typical Diode Capacition(V R = 0V, f = 1.0MHz) C/W mW 2.4 Maximum Thermal Resistance Junction to Ambient (Note 2) UNIT V 200 Derate Above 25 OC 2 BAL99W 75 pF ns 6.0 t rr μAdc 715 855 VF mV 1000 at I F = 150mAdc 1250 Notes: *1 FR-5=1.0x0.75x0.062 in *2 Alumina=0.4x0.3x0.024 in 99.5% Alumina Page 1 Document ID Issued Date Revised Date Revision Page. AS-3120031 2003/03/08 2012/05/16 D 4 Rating and characteristic curves for each diode (BAS16W/BAV70W/BAW56W/BAV99W BAL99W) 820 OHM +10V 2K 100uH 0.1 uF IF tp tr IF t 0.1 uF t t rr 10% DUT 50 OHM OUTPUT PULSE GENERATOR 50 OHM INPUT SAMPLING OSCILLOSCOPE 90% IR(REC)=1 mA IR VR OUTPUT PULSE (IF=IR=10mA;measured at iR(REC)=1mA) Notes : 1. A2.0 Kohm variable resistor adjusted for a forward Current (IF) of 10mA. 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. 3. tp >> trr. Notes: Notes: Recovery Time Equivalent Test Circuit Power Derating Curve PD (mW) 250 200 100 50 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) FIG.1-TYPICAL FORWARD CHARACTERISTICS FIG.2 - TYPICAL LEAKAGE CURRENT 10 1000 T A = 150 OC IR, REVERSE CURRENT,(uA) IF, FORWARD CURRENT,(mA) POWER DISSIPATION 150 100 O TA = 150 85OC C TA = 25OC 10 TA = 125OC 1.0 O TA = -40 C TA = 85OC 1.0 T A = 125 OC 0.1 T A = 85 OC T A= 55 OC 0.01 T A = 25 OC 0.1 0 0.001 0 0.2 0.4 0.6 0.8 1.0 10 20 30 40 50 VR, REVERSE VOLTAGE (V) 1.2 VF, FORWARD VOLTAGE,(V) Page 2 Document ID Issued Date Revised Date Revision Page. AS-3120031 2003/03/08 2012/05/16 D 4 Rating and characteristic curves for each diode (BAS16W/BAV70W/BAW56W/BAV99W BAL99W) FIG.3 - DIODE CAPACITANCE (BAS16W) FIG.4 - DIODE CAPACITANCE (BAV70W) 1.00 CD, DIODE CAPACITANCE,(pF) CD, DIODE CAPACITANCE,(pF) 0.68 0.64 0.60 0.56 0.52 0.90 0.80 0.70 0.60 0 2 4 6 8 0 2 VR, REVERSE VOLTAGE (V) FIG.5 - DIODE CAPACITANCE (BAW56W) 6 8 FIG.6 - DIODE CAPACITANCE (BAV99W) 0.68 CD, DIODE CAPACITANCE,(pF) 1.75 CD, DIODE CAPACITANCE,(pF) 4 VR, REVERSE VOLTAGE (V) 1.50 1.25 1.00 0.75 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, REVERSE VOLTAGE (V) 0 2 4 6 8 VR, REVERSE VOLTAGE (V) FIG.7 - DIODE CAPACITANCE (BAL99W) CD, DIODE CAPACITANCE,(pF) 4.00 3.00 2.00 1.00 0 0 2 4 6 8 VR, REVERSE VOLTAGE (V) Page 3 Document ID Issued Date Revised Date Revision Page. AS-3120031 2003/03/08 2012/05/16 D 4 BAV99W/BAL99W BAS16W/BAV70W/BAW56W 200mW Surface Mount Switching Diode- 75V Pinning information Type number Simplified outline Symbol Marking code (A) (B) A B A6 BAS16W (C) (A) C (B) A (B) A B A4, JA BAV70W (C) (A) BAW56W C B A1, JC (C) (A) C (B) A B A7, KJG BAV99W (C) (A) C (B) A B JF BAL99W (C) C Suggested solder pad layout SOT-323 0.025(0.65) 0.025(0.65) 0.075(1.9) 0.035(0.90) 0.028(0.70) Dimensions in inches and (millimeters) Reel packing PACKAGE SOT-323 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*183*123 178 Page 4 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 240,000 9.5 Document ID Issued Date Revised Date Revision Page. AS-3120031 2003/03/08 2012/05/16 D 4
BAV99W 价格&库存

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BAV99W
    •  国内价格
    • 1+0.26940

    库存:10