BC856B

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon Package outline • Moisture sensitivity level: 1 • ESD rating – human body model: >4000 V,machine model: >400 V • Epitaxial plana chip construction • Ideal for medium power application and switching • Capable of 225mW power dissipation. • Lead-free parts for green partner, exceeds environmental 0.020 (0.50) .084(2.10) .068(1.70) 0.120 (3.04) Mechanical data 0.110 (2.80) standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free part, ex.BC856A-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.012 (0.30) 0.045 (1.15) SOT-23 0.034 (0.85) Features 0.108 (2.75) 0.051 (1.30) MIL-STD-750, Method 2026 0.003 (0.09) 0.007 (0.18) 0.083 (2.10) 0.035 (0.89) • Mounting Position : Any • Weight : Approximated 0.008 gram Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A Rating Value Symbol Collector-Base voltage BC856 BC857 BC858,BC859 BC856 BC857 BC858 ,BC859 UNIT V CBO -80 -50 -30 V V CEO -65 -45 -30 V Emitter-Base voltage V EBO -5.0 V Collector current-continuous IC -100 Collector-Emitter voltage mAdc Thermal characteristics PARAMETER Symbol MIN. TYP. O Total device dissipation FR-5 board (1) T A = 25 C 225 PD Derate above 25 °C Thermal resistance Junction to ambient Total Device Dissipation Alumina Substrate( 2) T A = 25 OC Thermal resistance Junction to ambient R θJA mW 1.8 mW/°C 556 O 300 Derate above 25 °C Storage temperature range 1.FR -5=1.0 x 0.75 x 0.062 in. R θJA PD Operating junction temperature range MAX. UNIT C/W mW 2.4 mW/°C 417 O C/W TJ -55 +150 o C T STG -55 +150 o C 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. Page 1 Document ID Issued Date Revised Date Revision Page. AS-3140127 2013/03/08 2016/05/16 D 5 BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon Electrical characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER Collector-Base breakdown voltage CONDITIONS BC856 SERIES BC857 SERIES BC858 ,BC859 SERIES I c = -10µA Collector-Emitter breakdown voltage BC856 SERIES BC857 SERIES BC858 ,BC859 SERIES I c = -10mA Collector-Emitter breakdown voltage BC856 SERIES BC857 SERIES BC858 ,BC859 SERIES Emitter-Base breakdown voltage BC856 SERIES BC857 SERIES BC858 ,BC859 SERIES Collect Cutoff Current BC856 SERIES BC857 SERIES BC858 ,BC859 SERIES I c = -10µA, V EB = 0 Symbol V (BR)CBO V (BR)CEO I E = -1.0µA V CB = -30V V (BR)CES V (BR)EBO MIN. TYP. MAX. UNIT -80 -50 -30 -65 -45 -30 -80 -50 -30 -5.0 -5.0 -5.0 V V V V I CBO -15 -4.0 V CB = -30V, T A = 150°C nA mA On characteristics PARAMETER DC current gain CONDITIONS Symbol MIN. BC856A, BC857A, BC858A I c = -10µA, V CE = -5.0V BC856B, BC857B, BC858B BC858C MAX. UNIT 90 150 270 h FE BC856A, BC857A, BC858A I c = -2.0mA, V CE = -5.0V BC856B, BC857B, BC858B,BC859B BC857C, BC858C, BC859C Collector-Emitter saturation voltage I c = -10mA, I B = -0.5mA I c = -100mA, I B = -5.0mA V CE(sat) Base-Emitter saturation voltage I c = -10mA, I B = -0.5mA I c = -100mA, I B = -5.0mA V BE(sat) I c = -2.0mA, V CE = -5.0V I c = -10mA, V CE = -5.0V V BE(on) Base-Emitter on voltage TYP. 125 220 420 180 290 520 - 250 450 800 -0.30 -0.65 V -0.70 -0.90 V -0.75 -0.82 -0.60 V Small-signal characteristics PARAMETER CONDITIONS Symbol MIN. fT 100 Current-gain-bandwidth product I C = -10mA, V CE = -5.0Vdc, f = 100MHz Output capacitance V CB = -10V, f = 1.0MHz C obo Noise Figure I C = -0.2mA, V CE, = -5.0Vdc, RS=2.0kΩ, f=1.0kHz, BW=200Hz ΒC856,BC857,BC858 SERIES ΒC859 SERIES NF Page 2 TYP. MAX. UNIT 4.5 MHz Vdc pF dB 10 4.0 Document ID Issued Date Revised Date Revision Page. AS-3140127 2013/03/08 2016/05/16 D 5 Rating and characteristic curves BC856 Series Fig. 2-"ON" VOLTAGE -1.0 O T A = 25 C V, VOLTAGE (V) hFE, DC CURRENT GAIN (NORAMALIZED) Fig.1- DC CURRENT GAIN V CE = -5.0V O T A = 25 C 2.0 1.0 -0.8 V BE(sat) @ I C / I B = 10 -0.6 V BE @ C CE = -5.0V -0.4 0.5 -0.2 0.2 V CE(sat) @ I C / I B = 10 -0.2 -1.0 -10 0 -100 -200 -0.2 T A = 25 OC -1.6 -100mA -20mA -200mA -1.2 -0.8 -0.4 I C = -10mA 0 - 0.02 -0.05 -0.1 -1.0 -10 -20 IB, BASE CURRENT (mA) O θ VB, TEMPERATURE COEFFICIENT (mV/ C) FIG.3- COLLECTOR SATURATION REGION -2.0 -50mA Fig. 5.-CAPACITANCE 40 C, CAPACTIANCE (pF) -1.0 -5.0 -10 - 20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) Fig. 4-BASE-EMITTER TEMPERATURE COFFICIENT -1.0 -55 OC to 125 OC -1.4 -1.8 θVB for VBE -2.2 -2.6 -3.3 -0.2 -1.0 -10 -100 -200 IC, COLLECTOR CURRENT (mA) fT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHz) V CE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) -0.5 Fig. 6- CURRENT-GAIN-BANDEIDTH PRODUCT 500 20 C ib T A = 25 OC 10 100 6.0 C ob 4.0 2.0 V CE = -5.0V T A = 25 OC 200 -0.1 -1.0 -10 -100 VR, REVERSE VOLTAGE (V) Page 3 50 20 -1.0 -10 -100 IC, COLLECTOR CURRENT(mA) Document ID Issued Date Revised Date Revision Page. AS-3140127 2013/03/08 2016/05/16 D 5 Rating and characteristic curves BC857/BC858/BC859 Series Fig. 8-”SATURATION" AND "ON" VOLTAGE -1.0 O T A = 25 C V, VOLTAGE (V) hFE, DC CURRENT GAIN (NORAMALIZED) Fig.7- DC CURRENT GAIN 2.0 V CE = 10V O T A = 25 C 1.0 0.5 V BE(sat) @ I C / I B = 10 -0.8 -0.6 V BE(on) @ V CE = -10V -0.4 -0.2 V CE(sat) @ I C / I B = 10 0.2 -0.2 -1.0 -10 -100 0 -200 -0.1 -0.5 T A = 25 OC -1.6 -1.2 -200mA -0.8 -20mA -100mA -0.4 I C = -10mA 0 - 0.02 -0.1 -1.0 -10 -20 IB, BASE CURRENT (mA) O θ VB, TEMPERATURE COEFFICIENT (mV/ C) FIG.9- COLLECTOR SATURATION REGION -2.0 -50mA Fig. 11.-CAPACITANCE 10 C, CAPACTIANCE (pF) C ib T A = 25 OC 5 C ob 3 2 1 -0.4 -1.0 -10 -5.0 -10 - 20 -50 -100 IC, COLLECT CURRENT (mA) fT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHz) V CE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) -1.0 -40 Page 4 Fig. 10-BASE-EMITTER TEMPERATURE COFFICIENT 1.0 -55 OC to 125 OC 1.2 1.6 2.0 2.4 2.8 -0.2 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 12- CURRENT-GAIN-BANDEIDTH PRODUCT 400 200 V CE = -10V T A = 25 OC 100 40 20 -0.5 -1.0 -10 -50 IC, COLLECTOR CURRENT(mA) Document ID Issued Date Revised Date Revision Page. AS-3140127 2013/03/08 2016/05/16 D 5 BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859B BC859C 3A 3B 3E 3F 3G 3J 3K 3L 4B 4C Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) Reel packing PACKAGE SOT-23 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*123*183 178 Page 5 CARTON SIZE (m/m) 382*257*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Document ID Issued Date Revised Date Revision Page. AS-3140127 2013/03/08 2016/05/16 D 5