1N4148W

1N4148W SILICON EPITAXIAL PLANAR SWITCHING DIODE Forward Current:150mA Reverse Voltage:100V FEATURES  For surface mounted applications  Glass Passivated Chip Junction  Fast reverse recovery time  Ideal for automated placement  Lead free in comply with EU RoHS 2011/65/EU directives PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 MECHANICAL DATA  Case: SOD-123W  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 16mg/0. 00056oz 1 Simplified outline SOD-123W and symbol Absolute Maximum Ratings at 25 °C Symbols Parameter 1N4148W Units Maximum Repetitive Peak Reverse Voltage VRRM 100 V Maximum RMS voltage VRMS 75 V Average Rectified Forward Current IF(AV) 150 mA IFSM 0.5 1 4 A Ptot 400 mW Tj, Tstg -55 ~ +150 °C Non-reptitive Peak Forward Surge Current at 1s at 1ms at 1us Total Power Dissipation Operating and Storage Temperature Range Characteristics at Ta = 25 °C Symbols Parameter Reverse Break down Voltage at I R =1μA Maximum Forward Voltage at at at at 1 mA 10 m A 50 m A 150 m A Peak Reverse Current at at at at V R =20V T j=25°C V R =75V Tj=25°C V R =25V Tj =150°C V R =75V Tj=150°C Typical Junction Capacitance f=1MHz,V R =0V Maximum Reverse Recovery Time (1) 1N4148W Units V(BR)R 75 V VF 0.715 0.855 1.00 1.25 V IR 0.025 1 30 50 μA Cj 2 pF trr 4 ns （1） Measured with I F =I R =10mA,Irr=0.1xIR,R L =100Ω AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/3 Dated:03/2020 Rev: HW1.0 1N4148W RATINGS AND CHARACTERISTIC CURVES Fig.2 Typical Reverse Characteristics Instaneous Reverse Current（μ A） Total Power Dissipation (mW) Fig.1 Forward Current Derating Curve 500 400 300 200 100 0.0 25 50 75 100 125 150 175 100 T J =150°C 10 1 0.1 T J=25°C 0.01 00 1000 100 10 T J =25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 40 60 80 100 120 Fig.4 Typical Junction Capacitance Junction Capacitance (pF) Instaneous Forward Current (mA) Fig.3 Typical Instaneous Forward Characteristics 1.0 20 percent of Rated Peak Reverse Voltage (%) Ambient Temperature (°C) 1.4 100 T J =25°C 10 1 0.1 1.6 Instaneous Forward Voltage (V) 1.0 10 100 Reverse Voltage (V) AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/3 Dated:03/2020 Rev: HW1.0 1N4148W PACKAGE OUTLINE SOD-123W A b E C A1 ∠AL L ROUN D L1 E1 mm mil b A1 3.9 0.45 0.7 0.2 2.5 3.6 0.25 0.5 71 110 154 18 28 59 98 142 10 20 C D E E1 max 1.3 0.22 1.8 2.8 min 0.9 0.09 1.5 max 51 8.7 min 35 3.5 UNIT SOD-123W mechanical data L1 A The recommended mounting pad size 8 1N4148W 1.2 (47) Marking code T4 1.2 (47) 2.0 (79) 9° Marking Type number 1.2 (47) ∠ Uni t： mm (mil ) AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/3 Dated:03/2020 Rev: HW1.0