ATM2302BNSA

ATM2302BNSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: 20V Drain Current: 3A Features  Trench Power LV MOSFET technology  High power and current handing capability  RDS(ON) < 85mΩ (VGS = 4.5V)  RDS(ON) < 115mΩ (VGS = 2.5V) Application  PWM application  Load Switch Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current Ta=25℃@Steady State ID 3 A Continuous Drain Current Ta=70℃@Steady State ID 2.4 A Plused Drain Current1) IDM 14 A Power Dissipation PD 0.7 W RθJA 178 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient2) AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/4 Dated:03/2018 Rev: 1.0 ATM2302BNSA Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V Gate threshold voltage VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance1) RDS(on) Diode Forward Voltage VSD Maximum Body-Diode Continuous Current 20 V 0.55 1 µA ±0.1 µA 1.1 V VGS =4.5V, ID =3.0A 85 VGS =2.5V, ID =2.0A 115 VGS =0V, IS =3.0A 1.3 V 3.0 A IS mΩ Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS =10V,VGS =0V,f=1MHz VDS =10V,VGS =4.5V,ID =3.0A 280 pF 46 pF 29 pF 2.9 nC 0.4 nC 0.6 nC 13 ns 54 ns 18 ns 11 ns Switching Characteristics Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) VDD=10V, RL=5.5Ω, ID=3.6A VGEN=4.5V,Rg=6Ω tf Notes: 1) 2) Pulse Test: Pulse width≤300μs, duty cycle ≤2%. Device mounted on FR-4 PCB,1inch*0.85inch*0.062inch. AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/4 Dated:03/2018 Rev: 1.0 ATM2302BNSA Typical Characteristics Curves Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance Figure7. Safe Operation Area Figure8. Switching wave AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/4 Dated:03/2018 Rev: 1.0 ATM2302BNSA Package Outline SOT-23 Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. 0.90 0.00 0.90 0.30 0.08 2.80 1.20 2.25 0.95 REF. 1.80 0.55 REF. 0.30 0o Max. 1.15 0.10 1.05 0.50 0.15 3.00 1.40 2.55 2.00 0.50 8o Suggested Pad Layout AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 4/4 Dated:03/2018 Rev: 1.0