ATM6402NSA

ATM6402NSA N-Channel Enhancement Mode Field Effect Transistor Description The ATM6402NSA uses advanced trench technology Feature  to provide excellent RDS(ON), low gate charge and VDS (V) = 30V  operation with gate voltages as low as 4.5V. This ID = 6.1A (VGS = 10V)  RDS(ON) < 22mΩ (VGS = 10V)  RDS(ON) < 35mΩ (VGS = 4.5V) device is suitable for use as a load switch or in PWM applications. Standard Product ATM6402NSA is Pbfree. SOT-23 Marking D W D G : : AH YW AHY AHYW Device code Date code G S Order Information S Top View Schematic Device Package Shipping ATM6402NSA SOT-23 3000/Tape&Reel Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TA=25°C Continuous Drain Current NOET 1 TA=70°C 6.1 ID IDM Pulsed Drain Current NOET 2 TA=25°C Power Dissipation NOET 1 TA=70°C 46 A 1.25 PD W 0.8 TJ, TSTG Junction and Storage Temperature Range A 4.9 -55 to 150 °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient NOET 1 Maximum Junction-to-Ambient NOET 1 Maximum Junction-to-Lead NOET 3 t≤ 10s Steady-State Steady-State RθJA RθJL Typ Max Units 80 100 °C/W 104 130 °C/W 55 68 °C/W AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/5 Dated:10/2019 Rev: 1.0 ATM6402NSA Electrical Characteristics (TA=25°C unless otherwise noted) Parameter Static Characteristics Symbol Conditions Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 µA Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1.6 2.0 V Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=6.1A 18.0 22.0 mΩ Static Drain-Source On-Resistance Forward Transconductance VGS=4.5V, ID=5.6A 23.5 35.0 mΩ RDS(ON) gFS VDS=5.0V, ID=6.1A 9.5 VSD IS=1.0A,VGS=0V 0.75 Diode Forward Voltage Min Typ Max Units 30 1.0 V S 1.2 V Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=15V, 645 pF 87 pF Crss f=1MHz 68 pF Rg VGS=0V, VDS=0V, f=1MHz 4.5 Switching Characteristics Total Gate Charge Qgtot(10V) Total Gate Charge Qgtot(4.5V) Gate Source Charge Qgs Gate Drain Charge VGS=10V, VDS=15V, ID=6.1A nC 14.1 7.0 2.39 nC Qgd 2.36 nC Turn-On Delay Time td(on) 4.8 ns Turn-On Rise Time tr 18.6 ns Turn-Off Delay Time td(off) 19.2 ns 5.4 ns Turn-Off Fall Time VGS=10V, VDS=15V, tf RL=2.45Ω, RGEN=3Ω Note: 1. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment withTA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 5. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulserating. AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/5 Dated:10/2019 Rev: 1.0 ATM6402NSA RATINGS AND CHARACTERISTIC CURVES Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Gate Voltage Temperature Figure 5: On-Resistance vs Gate-Source Figure 6: Body-Diode Characteristics AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/5 Dated:10/2019 Rev: 1.0 ATM6402NSA Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Operating Area (Note 2) Junction-to-Ambient (Note 2) PD Ton T 1. Duty Cycle, D=Ton/T 2. Per Unit Base=RθJA =130oC/W 3.TJ,Max-TA=PDM*ZθJA*RθJA Figure 11: Normalized Maximum Transient Thermal Impedance（Note 2） AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 4/5 Dated:10/2019 Rev: 1.0 ATM6402NSA Package Outline Dimension (Units: mm) SOT-23 Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b c 0.300 0.080 0.400 0.115 0.500 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L θ 0.300 0o 0.500 8o AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 5/5 Dated:10/2019 Rev: 1.0