ATM2312NSA

ATM2312NSA N-CHANNEL ENHANCEMENT MODE POWER MOSFET Drain-Source Voltage: 20V Continuous Drain Current: 5.0A FEATURES  Small Package：SOT-23  VDS=20V, ID=5A SOT-23 RDS(ON)≤ 31.8mΩ@VGS=4.5V RDS(ON)≤35.6mΩ@VGS=2.5V  Advanced Trench Technology APPLICATIONS D  Load Switching for portable Application  DC/DC Converter 3 1 G 2 S Schematic diagram ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8.0 V ID 5 Pulsed Drain Current IDM 20 Continuous Source-Drain Diode Current IS 1.04 PD 0.35 W RθJA 357 ℃/W TJ 150 ℃ TSTG -55 to 150 ℃ Continuous Drain Current t = 5s Maximum Power Dissipation t = 5s Junction-to-Ambient Thermal Resistance Junction Temperature Storage Temperature Range AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/6 A Dated: 07/2017 Rev:2.0 ATM2312NSA ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250μA 20 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 0.45 0.7 1.0 V Gate Leakage Current IGSS VDS = 0V, VGS = ±8V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS =20V, VGS = 0V - - 1 μA VGS = 4.5V, ID = 5.0A - 18 31.8 23 35.6 Static Drain-Source On-ResistanceNote1 Forward transconductance RDS(ON) VGS = 2.5V, ID = 4.7A VGS = 1.8V, ID = 4.3A - 30 41.4 VDS = 10V, ID = 5.0A - 6 - - 865 - - 105 - - 55 - 0.5 - 4.8 - - 10 - - 20 - - 32 - - 12 - 0.75 1.2 gfs mΩ S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Turn-On Delay Time td(on) Turn-On Rise Time tr VDS = 10V, VGS = 0V, f = 1MHz f=1MHz VDD = 10V, RL = 2.2Ω RG = 1Ω, VGEN = 5V Turn-Off Delay Time Turn-Off Fall Time td(off) ID = 4A tf pF Ω ns Drain-source Body Diode Forward Diode Voltage VSD VGS = 0V, IS = 4A V Notes:1. Pulse test: pulse width ≦ 300us, duty cycle≦ 2%. AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/6 Dated: 07/2017 Rev:2.0 ATM2312NSA RATINGS AND CHARACTERISTIC CURVES (TA=25℃, unless otherwise noted) Threshold Voltage AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/6 Dated: 07/2017 Rev:2.0 ATM2312NSA PACKAGE OUTLINE SOT-23 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.8 1.9 SOT-23 0.550REF L1 2.2 Typ. 0.900 A 1.0 Dimensions in millimeter Min. 1.0 Symbol L 0.300 0.500 θ 0o 8o Recommended soldering pad ORDERING INFORMATION Device ATM2312NSA Package SOT-23 AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 4/6 Shipping 3000/Reel&Tape(7inch) Dated: 07/2017 Rev:2.0 ATM2312NSA CONDITIONS OF SOLDERING AND STORAGE  Recommended condition of reflow soldering Recommended peak temperature is over 245℃. If peak temperature is below 245℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 5/6 Dated: 07/2017 Rev:2.0 ATM2312NSA PACKAGE SPECIFICATIONS  The method of packaging SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 30,000 pcs per box 10 reels per box 220 195 0 21 43 5 120,000 pcs per carton 4 boxes per carton 435 210 Embossed tape and reel data T G 4.0 4.0 F N B H 8.0 E D  120°±2° 1Pin C A Tape (8mm) Symbol A B C E F D G H N T Reel (7'') AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 6/6 Value (unit: mm) 3.15 ± 0.1 2.7 ± 0.1 1.25 ± 0.1 2 ± 0.5 13 ± 0.5 178 ± 2.0 8.4 ± 1.5 4 ± 0.5 60 < 14.9 Dated:07/2017 Rev: 2.0