ATM2601PSG

ATM2601PSG P-Channel Enhancement Mode Power MOSFET Drain-Source Voltage -20V Continuous Drain Current -2.8A FEATURES SOT23-6 VDS = -20V,ID = -2.8A RDS(ON) < 80mΩ @ VGS=-2.5V RDS(ON) < 70mΩ @ VGS=-4.5V  High power and current handing capability  Halogen free product is acquired  Surface mount package APPLICATIONS  Battery protection  Load switch  Power management ABSOLUTE MAXIMUM RATINGS TA=25℃ unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 TA = 25 °C Continuous Drain Current (TJ = 150 °C) TA = 70 °C Pulsed Drain Current TA = 25 °C Continuous Source-Drain Diode Current1),2) TA = 25 °C Maximum Power Dissipation1),2) TA = 70 °C Operating Junction and Storage Temperature Range Unit V -2.8 ID - 1.8 IDM - 10 IS - 0.72 A 0.86 PD W 0.55 - 55 to 150 TJ, TSTG °C THERMAL CHARACTERISTIC Parameter Maximum Junction-to-Ambient 1),3) ≤5s Maximum Junction-to-Foot (Drain) Steady State Notes: 1.Surface Mounted on 1" x 1" FR4 board. 2.t = 5 s. 3.Maximum under Steady State conditions is 175 °C/W. Symbol Typical Maximum RθJA 120 145 RθJC 62 78 AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/9 Unit °C/W Dated:10/2018 Rev: 1.0 ATM2601PSG ELECTRICAL CHARACTERISTICS TA=25℃ unless otherwise noted Parameter Symbol Test Conditions Min. VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS ΔVDS/TJ VDS Temperature Coefficient V - 18 mV/°C ID = - 250 µA ΔVGS(th) /TJ VGS(th) Temperature Coefficient Gate-Source Threshold Voltage 2.2 -1 V VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current1) ID(on) 1) Drain-Source On-State Resistance Forward Transconductance1) - 0.45 µA VDS ≤ - 5 V, VGS = - 4.5 V -6 VGS = - 4.5 V, ID = - 2.8 A 0.070 0.090 0.110 VGS = - 2.5 V, ID = - 2.0 A 0.080 0.110 0.140 A Ω RDS(on) gfs VDS = - 5 V, ID = - 2.8 A 2.0 S Dynamic2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 405 VDS = - 10 V, VGS = 0 V, f = 1 MHz 75 pF 55 VDS = - 10 V, VGS = - 4.5 V, ID = - 2.8 A 5.5 10 3.3 6 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = - 10 V, VGS = - 2.5 V, ID = - 2.8 A 0.7 1.3 Rg f = 1 MHz AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/9 6.0 Ω Dated:10/2018 Rev: 1.0 ATM2601PSG Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time VDD = - 10 V, RL = 10 Ω ID = - 1 A, VGEN = - 4.5 V, RG = 1 Ω 11 20 35 60 30 50 10 20 ns tf Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current1) ISM Body Diode Voltage VSD TC = 25 °C - 1.3 A Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr - 10 IS = - 1.0 A - 1.2 V 30 50 ns 25 50 nC - 0.5 IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta 15 Reverse Recovery Rise Time tb 15 ns Notes: 1.Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. 2.Guaranteed by design, not subject to production testing. AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/9 Dated:10/2018 Rev: 1.0 ATM2601PSG TYPICAL CHARACTERISTICS CURVES 10 1.00 VGS = 2 V VGS = 5 thru 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 0.75 6 VGS = 1.5 V 4 TC = - 55 °C 0.50 TC = 25 °C 0.25 2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 0.00 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 800 0.15 600 C - Capacitance (pF) R DS(on) - On-Resistance () 0.6 VGS = 2.5 V 0.10 VGS = 4.5 V 0.05 Ciss 400 200 Coss Crss 0.00 0 0 2 4 8 10 0 5 ID - Drain Current (A) 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 1.5 ID = 2.8 A ID = 3 A 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 VDS = 5 V VDS = 10 V 4 VDS = 15 V 2 1.3 1.1 VGS = 4.5 V 0.9 VGS = 1.8 V 0 0 2 4 8 0.7 - 50 10 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 4/9 Dated:10/2018 Rev: 1.0 ATM2601PSG 0.60 10 R DS(on) - On-Resistance () I S - Source Current (A) ID = 2.8 A TJ = - 50 °C TJ = 150 °C 1 TJ = 25 °C 0.45 0.30 TJ = 125 °C 0.15 TJ = 25 °C 0.1 0.0 5 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 10 0.3 8 Power (W) 0.2 ID = 1 mA 0.1 6 4 0.0 2 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 TA = 25 °C 0 0.01 150 0.1 1 TJ - Temperature (°C) 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 10 100 µs Limited by RDS(on)* 1 ms I D - Drain Current (A) VGS(th) Variance (V) ID = 250 µA 1 10 ms 100 ms 0.1 1s 10 s 100 s, DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) > minimum VGS at which R DS(on) is specified Safe Operating Area AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 5/9 Dated:10/2018 Rev: 1.0 ATM2601PSG Normalized Effective Transient Thermal Impedance 1 0.1 0.01 10 -4 10 -2 10 -3 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 t1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJF = 50 °C/W 3. TJM - TA = PDMZthJ A(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 6/9 Dated:10/2018 Rev: 1.0 ATM2601PSG PACKAGE OUTLINE SOT23-6 AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 7/9 Dated:10/2018 Rev: 1.0 ATM2301PSA CONDITIONS OF SOLDERING AND STORAGE  Recommended condition of reflow soldering Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 ℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 ℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 8/9 Dated:10/2018 Rev: 1.0 ATM2301PSA PACKAGE SPECIFICATIONS  The method of packaging 3,000 pcs per reel SOT23-6 1 3 2 30,000 pcs per box 10 reels per box 220 195 120,000 pcs per carton 4 boxes per carton 435 210 Embossed tape and reel data 4.0 4.0 H 8.0 E B  F 1Pin 120°±2° C A Tape (8mm) Symbol A B C E F D G H N Reel (7'') T AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 9/9 Value (unit: mm) 3.15 ± 0.1 2.7 ± 0.1 1.25 ± 0.1 2 ± 0.5 13 ± 0.5 178 ± 2.0 8.4 ± 1.5 4 ± 0.5 60 < 14.9 Dated:10/2018 Rev: 1.0