ATM2N65TD

ATM2N65TD N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TD is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES       RDS(ON) < 5.0Ω @ VGS = 10V Ultra Low gate charge (typical 45nC) Low reverse transfer capacitance (CRSS = typical 9 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed (Note 2) Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-251 Power Dissipation SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt PD RATINGS 650 ±30 2.0 2.0 8.0 140 4.5 4.5 28 UNIT V V A A A mJ mJ V/ns W TJ Junction Temperature +150 °С TOPR Operating Temperature -55 ~ +150 °С TSTG Storage Temperature -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=64mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/6 Dated:12/2017 Rev: 2.0 ATM2N65TD ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VGS = 0V, ID = 250μA 650 VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V Forward Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.4 ON CHARACTERISTICS VGS(TH) VDS = VGS, ID = 250μA Gate Threshold Voltage 2.0 RDS(ON) Static Drain-Source On-State Resistance VGS = 10V, ID =1A 3.9 DYNAMIC CHARACTERISTICS CISS Input Capacitance 320 VDS =25V, VGS =0V, COSS Output Capacitance 40 f =1MHz CRSS Reverse Transfer Capacitance 9 SWITCHING CHARACTERISTICS tD (ON) Turn-On Delay Time 35 tR Turn-On Rise Time 40 VDD =325V, ID =2.4A, tD(OFF) RG=25Ω (Note 1, 2) Turn-Off Delay Time 130 tF Turn-Off Fall Time 40 Total Gate Charge QG 45 VDS=520V, VGS=10V, Q Gate-Source Charge GS 4 ID=2.4A (Note 1, 2) QGD Gate-Drain Charge 8.4 DRAIN-SOURCE DIODE CHARACTERISTICS VSD Drain-Source Diode Forward Voltage VGS = 0 V, ISD = 2.0 A ISD Continuous Drain-Source Current ISM Pulsed Drain-Source Current trr Reverse Recovery Time 180 VGS = 0 V, ISD = 2.4A, QRR di/dt = 100 A/μs (Note1) Reverse Recovery Charge 0.72 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature BVDSS IDSS AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/6 10 100 -100 V μA nA nA V/°С 4.0 5.0 V Ω 370 50 12 pF pF pF 50 60 160 60 55 ns ns ns ns nC nC nC 1.4 2.0 8.0 V A A ns μC Dated:12/2017 Rev: 2.0 ATM2N65TD TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Perio d D= P. W. Perio d VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD VDS (D.U.T.) Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/6 Dated:12/2017 Rev: 2.0 ATM2N65TD TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 4/6 Dated:12/2017 Rev: 2.0 ATM2N65TD TYPICAL CHARACTERISTICS CURVES Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, ID (µA) 250 200 150 100 50 200 150 100 50 0 0 0.6 1.2 1.8 2.4 3.0 3.6 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) 0 300 450 600 750 0 150 Drain-Source Breakdown Voltage, BVDSS (V) Drain Current, ID (A) Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 5/6 Dated:12/2017 Rev: 2.0 ATM2N65TD Package Outline TO-251 AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 6/6 Dated:12/2017 Rev: 2.0