1N4148WS

1N4148WS SILICON EPITAXIAL PLANAR SWITCHING DIODE Forward Current:300mA Reverse Voltage:100V FEATURES  For surface mounted applications  Glass Passivated Chip Junction  Fast reverse recovery time  Ideal for automated placement  Lead free in comply with EU RoHS 2011/65/EU directives PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 MECHANICAL DATA  Case: SOD-323W  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 16mg/0. 00056oz 1 Simplified outline SOD-323W and symbol Absolute Maximum Ratings at 25 °C Symbols Parameter 1N4148WS Units Maximum Repetitive Peak Reverse Voltage VRRM 100 V Maximum RMS voltage VRMS 75 V Average Rectified Forward Current IF(AV) 300 mA IFSM 4 A Ptot 400 mW Tj, Tstg -55 ~ +150 °C Non-reptitive Peak Forward Surge Current at 1ms Total Power Dissipation Operating and Storage Temperature Range Characteristics at Ta = 25 °C Symbols Parameter Reverse Break down Voltage at I R =1μA Maximum Forward Voltage Peak Reverse Current Typical Junction Capacitance at 1 m A at 10 m A at 50 m A at 150 m A at at at at V R =20V T J=25°C V R =75V T J=25°C V R =25V TJ =150°C V R =75V T J =150°C f=1MHz,V R =0V Maximum Reverse Recovery Time (1) 1N4148WS Units V(BR)R 75 V VF 0.715 0.855 1.00 1.25 V IR 0.025 1 30 50 μA Cj 5 pF trr 8 ns （1） Measured with I F =I R =10mA,Irr=0.1xIR,R L =100Ω AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/3 Dated:08/2018 Rev: 1.0 1N4148WS RATINGS AND CHARACTERISTIC CURVES Fig.2 Typical Reverse Characteristics Instaneous Reverse Current（μ A） Total Power Dissipation (mW) Fig.1 Forward Current Derating Curve 500 400 300 200 100 0.0 25 50 75 100 125 150 175 100 T J =150°C 10 1 0.1 T J=25°C 0.01 00 1000 100 10 T J =25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 40 60 80 100 120 Fig.4 Typical Junction Capacitance Junction Capacitance (pF) Instaneous Forward Current (mA) Fig.3 Typical Instaneous Forward Characteristics 1.0 20 percent of Rated Peak Reverse Voltage (%) Ambient Temperature (°C) 1.4 100 T J =25°C 10 1 0.1 1.6 Instaneous Forward Voltage (V) 1.0 10 100 Reverse Voltage (V) AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/3 Dated:08/2018 Rev: 1.0 1N4148WS PACKAGE OUTLINE SOD-323W E A D b ∠ALL ROUND C A1 L1 E1 mm mil b A1 2.75 0.45 0.4 0.2 1.4 2.55 0.25 0.25 70 108 18 16 100 10 9.8 C D E max 1.1 0.15 1.4 1.8 min 0.8 0.08 1.2 max 43 5.9 55 min 32 3.1 47 UNIT 63 The recommended mounting pad size 1.4 (79) E1 8 ∠ 9° Marking 1.2 (47) Type number Marking code 1N4148WS T4 1.2 (47) 1.2 (47) SOD-323W mechanical data L1 A Uni t： mm (mil ) AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/3 Dated:08/2018 Rev: 1.0