BC817-40

BC817-16/-25/-40 NPN Transistor Features  For switching, AF driver and amplifier applications  These transistors are subdivided into three groups SOT-23 -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC817 are recommended 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (TA=25℃, unless otherwise noted) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Operation Junction and Storage Temperature Range Symbol Value Unit VCBO VCEO VEBO IC PC TJ,TSTG 50 45 5 0.5 0.3 150,-55 to 150 V V V A W ℃ Electrical Characteristics(TA=25 oC, unless otherwise noted) Parameter Symbol Collector cut-off current Emitter cut-off current DC current gain BC817-16 BC817-25 BC817-40 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector Base Capacitance ICBO IEBO hFE1 hFE2 hFE3 hFE4 VCE(sat) VBE(on) fT Cbo Test conditions Min Typ VCB =20V VEB =5V 100 160 250 VCE =1V, IC =100mA VCE =1V, IC =500mA IC =500mA, IB =50mA IC =500mA,VCE =1V 40 VCE=5V,IC=10mA, f=50MHz 100 Max Unit 100 100 250 400 600 nA nA 0.7 1.2 V V MHZ 9 VCB=10V, f=1MHz pF Marking RANK Marking BC817-16 BC817-25 BC817-40 6CQ 6CS 6CT AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/3 Dated:12/2020 Rev: 1.0 BC817-16/-25/-40 Typical Characteristics Curves AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/3 Dated:12/2020 Rev: 1.0 BC817-16/-25/-40 Package Outline AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/3 Dated:12/2020 Rev: 1.0