ATM1205PSI

ATM1205PSI P-Channel Enhancement Mode Field Effect Transistor Description Feature The ATM1205PSI uses advanced trench technology  VDS (V) = -12V to provide excellent RDS(ON), low gate charge and  ID = -1.7 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This  RDS(ON) < 100mΩ (VGS = -4.5V) device is suitable for use as a load switch or in  RDS(ON) < 130mΩ (VGS = -3.6V) PWM applications. Standard Product ATM1205PSI  RDS(ON) < 150mΩ (VGS = -2.5V) is Pb-free.  RDS(ON) < 250mΩ (VGS = -1.8V) SOT-323 Marking D B YW BYW D G : : Device code Date code G Order Information S S Top View Schematic Device Package Shipping ATM1205PSI SOT-323 3000/Tape&Reel Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Maximum Units Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±12 V Continuous Drain Current TA=25°C NOET 1 TA=70°C Pulsed Drain Current NOET 2 -1.7 ID IDM TA=25°C Power Dissipation NOET 1 TA=70°C Junction and Storage Temperature Range A -1.4 -20 A 0.47 PD W 0.30 TJ, TSTG -55 to 150 °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient NOET 1 Maximum Junction-to-Ambient NOET 1 Maximum Junction-to-Lead NOET 3 t≤ 10s Steady-State Steady-State RθJA RθJL Typ Max Units 215 265 °C/W 240 300 °C/W 105 130 °C/W AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/5 Dated:10/2019 Rev: 1.0 ATM1205PSI Electrical Characteristics (TA=25°C unless otherwise noted) Parameter Static Characteristics Symbol Conditions Drain-Source Breakdown Voltage BVDSS ID=-250µA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-9.6V, VGS=0V -1 µA Gate-Body leakage current IGSS VDS=0V, VGS=±12V ±100 nA VGS(th) VDS=VGS, ID=-250µA -0.75 -1.0 V VGS=-4.5V, ID=-1.7A 75 100 mΩ VGS=-3.6V, ID=-1.0A 80 130 mΩ VGS=-2.5V, ID=-1.0A 103 150 mΩ 250 mΩ Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) Min Typ Max Units -12 -0.45 V VGS=-1.8V, ID=-0.6A 150 Forward Transconductance gFS VDS=-1.8V, ID=-1.0A 4.8 Diode Forward Voltage VSD IS=-1.0A,VGS=0V -0.85 S -1.2 V Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss 618 pF Coss VGS=0V, VDS=-10V, 172 pF Crss f=100KHz 134 pF 8.7 nC 1.5 nC Switching Characteristics Total Gate Charge Qgtot Qgs VGS=-4.5V, VDS=-10V, Gate Drain Charge Qgd ID=-1.7A Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Gate Source Charge Turn-Off Fall Time VGS=-4.5V, VDD=-10V, Id=-1.7A, RGEN=6Ω tf 2.9 nC 15.8 ns 19.8 ns 92.4 ns 139.6 ns Note: 1. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment withTA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 5. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulserating. AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/5 Dated:10/2019 Rev: 1.0 ATM1205PSI RATINGS AND CHARACTERISTIC CURVES Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Gate Voltage Temperature Figure 5: On-Resistance vs Gate-Source Figure 6: Body-Diode Characteristics AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/5 Dated:10/2019 Rev: 1.0 ATM1205PSI Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Operating Area (Note 5) Junction-to-Ambient (Note 5) PD T on T 1. DutyCycle, D=Ton/T 2. Per Unit Base=RθJA =300oC/W 3.TJ,Max-TA=PDM*ZθJA*RθJA Figure 11: Normalized Maximum Transient Thermal Impedance AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 4/5 Dated:10/2019 Rev: 1.0 ATM1205PSI Package Outline Dimension (Units: mm) SOT-323 Recommended Soldering Footprint 1.6 0.8 0.8 0.8 0.8 1.3 Packing information Package SOT-323 Pitch Reel Size Tape Width (mm) mm inch mm inch 8 4 ± 0.1 0.157 ± 0.004 178 7 Per Reel Packing Quantity AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 5/5 3,000 Dated:10/2019 Rev: 1.0