ESN7401
Rev-1.1
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SuperMOS - PDFN3X3-8L -30V BVDSS,13mΩ RDS(on), -31A ID P-channel MOSFET
1. Description
The ESN7401 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ESN7401 is Pb-free.
2. Features
⚫
-30V, RDS(ON)=13 mΩ(Typ), VGS=-10V
⚫
Material: Halogen free
RDS(ON)=17mΩ(Typ), VGS=-4.5V
⚫
Reliable and rugged
⚫
Fast Switching
⚫
Avalanche Rated
⚫
High density cell design for low RDS(on)
⚫
Low leakage current
3. Applications
⚫
PWM applications
⚫
Power management in portable/desktop PCs
⚫
Load switch
⚫
DC/DC conversion
4. Ordering Information
Part Number
Package
Marking
Material
Quantity per reel
Flammability Rating
ESN7401
PDFN3X3-8L
.ESN7401/LOT
Halogen free
5,000 PCS
UL 94V-0
5. Pin Configuration and Functions
Pin
Function
4
Gate
8 7 6 5
1/2/3
Source
ESN7401/LOT
5/6/7/8
Drain
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Outline
1
2 3
Circuit Diagram
4
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6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25 ℃ ambient temperature unless otherwise specified.
Symbol
Limit
Unit
Drain-Source Voltage
BVDSS
-30
V
Gate-Source Voltage
VGS
±25
V
Parameter
TC=25°C
Continuous Drain Current
TC=75°C
-31
ID
A
-24
TC=25°C
Maximum Power Dissipation
TC=75°C
30
PD
W
18
Pulsed Drain Current a
IDM
-124
A
Operating Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Typical
t ≤ 10 s
RθJA
40
Steady State
RθJC
4.2
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
Unit
°C/W
Note:
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
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Electrical Characteristics
At TA = 25℃ unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-30
V
Zero Gate Voltage Drain Current
IDSS
VGS=0V, VDS=-30V
-1
uA
Gate-to-source Leakage Current
IGSS
VGS=±25V, VDS=0V
±100
nA
-1.5
-2.0
V
VGS=-10V, ID=-8A
13
20
VGS=-4.5V, ID=-7A
17
27
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Drain-to-source On-resistance
RDS(on)
VGS=VDS, ID=-250uA
-1.0
mΩ
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
VGS=0V
VDS =-15V
f=1MHz
VGS=-10V
VDS=-15V
ID =-10A
1230
160
pF
145
26.4
6
nC
4.3
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
VGS=-10V
VDS=-15V
RL=1Ω
RG=3Ω
18
22
ns
55
42
BODY DIODE CHARACTERISTICS
Forward Voltage
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VSD
VGS=0V, ISD=-10A
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Typical Characteristic
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D
L1
H
8. Dimension (PDFN3X3-8L)
b
E2
L
E
E1
D1
L3
L2
e
A2
A1
A
θ
Unit: mm
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
MILLIMETER
MILLIMETER
SYMBOL
A
SYMBOL
MIN
Typ.
MAX
0.700
0.800
0.900
MIN
Typ.
MAX
b
0.200
0.300
0.400
A1
0.152 REF.
e
0.550
0.650
0.750
A2
0~0.05
L
0.300
0.400
0.500
0.180
0.330
0.480
D
3.000
3.100
3.200
L1
D1
2.300
2.450
2.600
L2
0~0.100
E
2.900
3.000
3.100
L3
0~0.100
E1
3.150
3.300
3.450
H
0.315
0.415
0.515
E2
1.320
1.520
1.720
θ
8°
10°
12°
Table-5
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Product dimensions in millimeter
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DISCLAIMER
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WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE
OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
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