ES8205

ES8205 Rev-1.1 www.elecsuper.com SuperMOS – SOT-23-6L 20V BVDSS,22mΩ RDS(ON),4.9A ID, N-channel MOSFET 1. Description The ES8205 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product ES8205 is Pb-free. 2. Features ⚫ 20V, RDS(ON)=22mΩ(Typ), VGS=4.5V RDS(ON)=30mΩ(Typ), VGS=2.5V ⚫ Material: Halogen free ⚫ Reliable and rugged ⚫ Use trench MOSFET technology ⚫ Avalanche Rated ⚫ High density cell design for low RDS(on) ⚫ Low leakage current 3. Applications ⚫ PWM applications ⚫ Power management in portable/desktop PCs ⚫ Load switch ⚫ DC/DC conversion 4. Ordering Information Part Number Package Marking ES8205 SOT-23-6L .8205 Flammability per reel Rating Packing Halogen Tape & 3,000 free Reel PCS Table-1 Copyright© ElecSuper Incorporated Quantity Material UL 94V-0 Reel Size 7 inches Ordering information Contact Us 1 / 5 ES8205 Rev-1.2 www.elecsuper.com 5. Pin Configuration and Functions Pin Function 2/5 Drain 4/6 Gate 1/3 Source Outline 6 5 Circuit Diagram 4 8205 1 2 3 Table-2 Pin configuration 6. Specification Absolute Maximum Rating & Thermal Characteristics Ratings at 25 ℃ ambient temperature unless otherwise specified. Symbol Limit Unit Drain-Source Voltage BVDSS -20 V Gate-Source Voltage VGS ±10 V Parameter Continuous Drain Current a Maximum Power Dissipation a TA=25°C TA=75°C 4.9 ID A 3.8 TA=25°C TA=75°C 1.12 PD W 0.67 Pulsed Drain Current b IDM 19.6 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Single Operation Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Case Thermal Resistance Symbol Typical Maximum t ≤ 10 s RθJA 90 112 Steady State RθJC 63 78 Unit °C/W Note: a: Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% Copyright© ElecSuper Incorporated Contact Us 2 / 5 ES8205 Rev-1.2 www.elecsuper.com Electrical Characteristics At TA = 25℃ unless otherwise specified Parameter Symbol Test Conditions Min. Typ. Max. Unit BVDSS VGS=0V, ID=250uA 20 Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Gate-to-source Leakage Current IGSS VDS=0V, VGS=±12V ±100 nA Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250uA 0.65 1.1 V Drain-to-source On-resistance RDS(on) VGS=4.5V, ID=4.5A 22 30 VGS=2.5V, ID=3.5A 30 40 gFS VDS=5.0V, ID=4.5A 6.5 42 S VSD VGS=0V, IS=1.0A 0.75 1.25 V OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V ON CHARACTERISTICS Forward Trans conductance 0.45 mΩ BODY DIODE CHARACTERISTICS Forward Voltage Copyright© ElecSuper Incorporated Contact Us 3 / 5 ES8205 Rev-1.2 www.elecsuper.com 8. Dimension (SOT-23-6L) D b θ L E1 E C e e1 A1 A A2 Unit: mm Symbol Spec A A1 A2 b c D Min 1.050 0.000 1.050 0.300 0.100 2.820 Max 1.250 0.100 1.150 0.500 0.200 3.020 E E1 e e1 L θ Min 1.500 2.650 1.800 0.300 0° Max 1.700 2.950 2.000 0.600 8° Symbol Spec Table-5 0.950BSC Product dimensions in millimeter 0.60 0.80 2.02 1.90 Copyright© ElecSuper Incorporated Note: 1. Controlling dimension: in millimeters 2. General tolerance: ±0.05mm 3. The pad layout is for reference only Unit: mm Contact Us 4 / 5 ES8205 Rev-1.2 www.elecsuper.com DISCLAIMER ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for (1) selecting the appropriate ElecSuper products for your application; (2) designing, validating and testing your application; (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. 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