BSS138-13-F-ES
Rev-1.1
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SuperMOS – SOT-23 60V BVDSS 1.5Ω RDS(on) 0.41A ID, N-channel MOSFET
1. Description
The BSS138-13-F-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product BSS138-13-F-ES is Pb-free.
2. Features
60V, RDS(ON)=1.5Ω(Typ), VGS=10V
Material: Halogen free
RDS(ON)=1.6Ω(Typ), VGS=4.5V
Reliable and rugged
Use trench MOSFET technology
Avalanche Rated
High density cell design for low RDS(on)
Low leakage current
3. Applications
PWM applications
Power management in portable/desktop PCs
Load switch
DC/DC conversion
4. Ordering Information
Part Number
Package
Material
Packing
BSS138-13-F-ES
SOT-23
Halogen
free
Tape &
Reel
Table-1
Quantity
per reel
3,000
PCS
Flammability
Rating
Reel Size
UL 94V-0
7 inches
Ordering information
5. Pin Configuration and Functions
Pin
Function
1
Gate
2
Source
3
Drain
Outline
D
3
1
2
G
S
Table-2
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Circuit Diagram
Pin configuration
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6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25 ℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
BVDSS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
0.41
A
Maximum Power Dissipation
PD
417
mW
Pulsed Drain Current a
IDM
1.64
A
Operating Junction Temperature
TJ
150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55 to 150
°C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance
Symbol
Typical
Unit
RθJA
300
°C/W
Note:
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
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Electrical Characteristics
At TA = 25℃ unless otherwise specified
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-to-source Leakage Current
IGSS
VGS=0V, ID=10mA
60
V
VDS=60V, VGS=0V,TJ=25℃
1.0
VDS=40V, VGS=0V, TJ=125℃
100
VDS=0V, VGS=±20V
±10
uA
1.0
1.5
V
VGS=10V, ID=0.5A
1.5
1.9
VGS=4.5V, ID=0.2A
1.6
2.5
VGS=2.5V, ID=0.1A
2.73 4.5
uA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Drain-to-source On-resistance
RDS(on)
VGS=VDS, ID=250uA
0.8
Ω
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
Total Gate Charge
25
50
9.7
22
CRSS
2.2
5
QG(TOT)
0.65
1
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
VGS=0V, f=1MHz, VDS =25V
VGS=4.5V, VDS=25V, ID=0.25A
0.2
pF
nC
0.23
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
VGS=10V, VDS=25V, ID=0.5A,
RG=6Ω
tf
2.3
5
19.2
40
6.3
12
23
50
ns
BODY DIODE CHARACTERISTICS
Forward Voltage
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VSD
VGS=0V, IS=0.5A
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0.86 1.5
V
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Typical Characteristic
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8. Dimension and Patterns (SOT-23)
θ
D
b
L1
3
E1
E
1
2
L
e
C
e1
A1
A
Units: mm
Symbol
Dimensions
Symbol
Dimensions
Min.
Max.
Min.
Max.
A
0.900
1.150
E1
2.250
2.550
A1
0.900
1.050
e
b
0.300
0.500
e1
c
0.080
0.150
L
D
2.800
3.00
L1
0.300
0.500
E
1.200
1.400
θ
0°
8°
0.950TYP
1.800
2.000
0.550REF
0.60
0.80
2.02
1.90
Note:
1. Controlling dimension: in millimeters
2. General tolerance: ±0.05mm
3. The pad layout is for reference only
4. Unit: mm
DISCLAIMER
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