2SD874A

2SD874A SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES SOT-89 z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A z 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 μA hFE(1) VCE=10V,IC=500mA 85 hFE(2) VCE=5V,IC=1A 50 340 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V fT Transition frequency Cob Collector output capacitance VCE=10V,IC=50mA,f=200MHz 200 MHz VCB=10V,IE=0,f=1MHz 20 pF CLASSIFICATION OF hFE(1) Rank Range Marking REV.08 Q R S 85-170 120-240 170-340 YQ YR YS 1 of 3 2SD874A Static Characteristic 0.8 IC 2.5mA COLLECTOR CURRENT 0.5 2.0mA 0.4 1.5mA 0.3 1.0mA 0.2 0.1 Ta=25℃ IB=0.5mA 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1200 COMMON EMITTER VCE= 10V 12 10 0.4 13 10 100 COLLECTOR CURRENT IC VCEsat 1000 —— IC 1000 (mA) IC β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 900 600 Ta=25℃ Ta=100 ℃ 300 0.1 1 VCE (V) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) IC 100 0.0 1 10 100 COLLECTOR CURREMT IC 1000 —— IC 100 Ta=100 ℃ Ta=25℃ 10 0.1 1000 1 10 COLLECTOR CURREMT (mA) VBE fT 1000 —— 100 IC 1000 (mA) IC (MHz) COMMON EMITTER VCE=10V (mA) —— Ta=100℃ hFE 0.6 DC CURRENT GAIN (A) 0.7 hFE 1000 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA COMMON EMITTER Ta=25℃ 10 TRANSITION FREQUENCY T =2 5℃ a ℃ T= a 10 0 COLLECTOR CURRENT IC fT 100 1 100 10 COMMON EMITTER VCE= 10V Ta=25℃ 0.1 300 600 900 1 2.38 1200 10 Cob/Cib 1000 —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ 100 Cob 1 0.1 0.3 —— IC (mA) Ta 500 400 300 200 100 0 1 10 REVERSE VOLTAGE REV.08 PC 600 f=1MHz IE=0/IC=0 10 70 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) V 30 0 25 50 75 AMBIENT TEMPERATURE (V) 2 of 3 100 Ta 125 (℃ ) 150 2SD874A SOT-89 Package Outline Dimensions Symbol A b b1 c D D1 E E1 e e1 L SOT-89 Suggested Pad Layout REV.08 www.cj-elec.com 3 of 3 Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047