FDN336P

FDN336P P-Channel Enhancement Mode MOSFET Feature -20V/-2A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V. Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package SOT-23 Applications ● Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings Parameter TA=25℃ Unless Otherwise noted Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Electrical Characteristics Parameter Off Characteristics Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse VDS VGS ID TA=25℃ Unless Otherwise noted Symbol Test Conditions Limit Units -20 ±10 -2 V V A Min Typ. Max Units - V BVDSS VGS=0V, ID=-250μA -20 - IDSS VDS=-20V, VGS=0V - - -1 μA IGSSF IGSSR VGS=10V, VDS=0V VGS=-10V, VDS=0V - - 100 -100 nA nA VGS(th) VGS= VDS, ID=-250µA -0.4 - -1.0 V RDS(ON) VGS =-4.5V, ID =-2.0A VGS =-2.5V, ID =-1.5A - --- 120 150 mΩ mΩ -1.2 V On Characteristics Gate Threshold Voltage Static Drain-source On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage REV.08 VSD VGS =0V, IS=-1.25A 1 of 4 FDN336P Typical Characteristics 12 VGS=3，3.5，4V，4.5V 14 10 12 10 8 VGS=2.5V 8 6 Tj＝150℃ 6 4 4 Tj＝25℃ 2 2 VGS=2.0V 0 0 0 1 2 3 -VDS,Drain-Source 4 5 0 1 Voltage(V) 2 3 -VGS,Gate-to-Source Figure 1．Output Characteristics Voltage 4 (V) Figure 2．Transfer Characteristics 1.3 23.2 ID=250uA 23 1.2 22.8 1.1 22.6 1 22.4 0.9 22.2 0.8 22 0 50 Tj,Junction 100 50 Tj,Junction Temperature(℃) Figure 3．Breakdown Voltage Variation with Temperature REV.08 0 150 100 Temperature(℃) Figure 4．Gate Threshold Variation with Temperature 2 of 4 150 FDN336P Typical Characteristics 0.125 0.35 -2.0V/-2.0A 0.3 0.12 0.25 VGS=-2.5V 0.115 0.2 0.11 0.15 VGS=-4.5V 0.1 0.105 0.05 0.1 0 50 100 Tj,Junction 0 150 0 Temperature(℃) Figure 5．On-Resistance Variation with Temperature 5 10 15 - ID-Drain Current(A) 20 Figure 6．On-Resistance vs. Drain Current 0.3 100 ID=-2A 0.25 0.2 10 Tj＝150℃ ID=-1.5A 0.15 Tj＝25℃ 1 0.1 0.05 0 1 2 3 - VGS,Gate-to-Source 4 Voltage 5 (V) Figure 7 ． On-Resistance vs. Gate-to-Source Voltage Voltage REV.08 3 of 4 0.1 1 2 -VSD,Body 3 Diode 4 Forward 5 Voltage(V) Figure 8 ． Source-Drain Diode Forward FDN336P Package Outline Dimensions (UNIT: mm) SOT-23 REV.08 4 of 4