2SB798

2SB798 PNP-Silicon General use Transistors 1W 、1.0A、25V 4 1 Applications：Can be used for switching and amplifying in various 2 3 1 2 3 SOT-89 1 Base 2/4 Collector 3 Emitter electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Collector-emitter voltage (IB=0) VCEO 25 Unit V Collector-base voltage（IE=0） VCBO 30 V Emitter-base voltage（IC=0） VEBO 6 V IC 1.0 A Ptot 1 W Junction temperature Tjm 150 ℃ Storage temperature Tstg -55～150 ℃ Collector current Total dissipation * power(TA=25℃) * Device is mounted on a printed circuit board. Electrical characteristics（Unless otherwise specified，TA=25℃） Parameters Symbol Test condition Min. Max. Unit Collector-emitter breakdown voltage V(BR)CEO IC=2mA，IB=0 25 — V Collector-base breakdown voltage V(BR)CBO IC=100µA，IE=0 30 — V Emitter-base breakdown voltage V(BR)EBO IE=100µA，IC=0 6 — V 135 270 — 200 400 — VCB=35V，IE=0 — 100 nA VCE（sat） IC=800mA，IB=80mA — 0.5 V fT IC=50mA，VCE=10V， f=100MHz 200 — MHz Forward current transfer ratio DL hFE DK Collector-base current Collector-emitter saturation voltage Characteristic frequency REV.08 VCE=1V；IC=100mA ICBO 1 of 3 2SB798 Typical characteristics REV.08 2 of 3 2SB798 Outline dimensions（see fig.1） Unit：mm Dimensions Symbol A b b1 b2 c D E e e1 HE L LE α Fig.1 REV.08 Outline Dimensions 3 of 3 min 1.4 0.35 0.4 SOT-89 type max 1.6 0.55 0.65 1.6 0.35 4.4 2.35 0.45 4.6 2.55 1.5 3 4.15 2.7 1.0 5o