BCV47

BCV47 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 10 V IC 300 mA RθJA 556 °C/W Ptot 225 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Collector Current Typical Thermal Resistance 1） Total Power Dissipation 1 C C Thermal resistance from junction to ambient at P .C.B. mounted Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE 10000 - - - hFE 20000 - - - ICBO - - 100 nA V(BR)CEO 30 - - V VCE(sat) - - 1.5 V VBE(on) - - 2.0 V fT 125 - - MHz DC Current Gain at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 100 mA Collector Cutoff Current at VCB = 30 V Collector Emitter Breakdown Voltage at IC = 10 mA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter On-state Voltage at IC = 100 mA, VCE = 5 V Transition Frequency at VCE = 5 V, IC = 50 mA, f = 100 MHz REV.08 1 of 2 BCV47 PACKAGE OUTLINE Plastic surface mounted package; 3 leads REV.08 SOT-23 2 of 2