ES1GG

ES1AG THRU ES1JG Surface Mount Superfast Recovery Rectifier PINNING Reverse Voltage – 50 to 600 V Forward Current – 1 A PIN DESCRIPTION FEATURES 1 Cathode • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives 2 Anode 1 MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 0.055g / 0.002oz 2 Top View Marking Code: ES1A~ES1J Simplified outline SMA and symbol Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols Parameter ES1AG ES1BG E S1CG E S1DG E S1EG E S1GG E S1JG Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T L = 100 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 30 A Maximum Forward Voltage at 1 A VF Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time Typical Thermal Resistance （1） （2） Operating and Storage Temperature Range （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . REV.08 1.25 1 1.70 V IR 5 100 μA Cj 15 pF t rr 35 ns RθJA 110 °C/W T j , T stg -55 ~ +150 °C （2）P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas. 1 of 3 ES1AG THRU ES1JG Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 1.2 1.0 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 0.2 Single phase half wave resistive or inductive 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Case Temperature (°C) Junction Capacitance ( pF) Instaneous Forward Current (A) ES1AG~ES1DG ES1EG/ES1GG 0.1 ES1JG 0.01 0.001 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 35 30 25 20 15 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles REV.08 100 25 20 15 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 05 0.1 1 10 Reverse Voltage (V) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 05 80 Fig.5 Typical Junction Capacitance 1.0 0.5 60 30 T J =25°C 0 40 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 10 20 2 of 3 100 ES1AG THRU ES1JG PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c a VM e A HE g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil The recommended mounting pad size 2.4 (94) mm Unit ： (mil) REV.08 a 0.3 12 Marking Type number Marking code ES1AG ES1A 1.8 (71) 1.8 (71) 1.8 (71) g e A D 3 of 3 ES1BG ES1B ES1CG ES1C ES1DG ES1D ES1EG ES1E ES1GG ES1G ES1JG ES1J