DN8B20KC
DN8B20KC
20V/0.8A N Channel Small Signal MOSFET
General description
20V/0.8A N Channel Small Signal MOSFET
Features:
•
Low RDS(on) @VGS=4.5V
•
2.5V Logic Level Control
•
N Channel SOT-883 Package
•
ESD Protection
•
Pb−Free, RoHS Compliant
Applications
•
LED Lighting Application,
•
ON/OFF switch
•
Networking
V(BR)DSS
20V
RDS(ON) Typ
SOT-883
ID Max
200mΩ @4.5V
0.8A
220mΩ @ 3.3V
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VGS
Gate-Source Voltage
±8
V
V
Drain-Source Breakdown Voltage
20
V
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-50 to 150
°C
(BR)DSS
Mounted on Large Heat Sink
IDM
Pulse Drain Current Tested①
TA =25°C
3.2
A
ID
Continuous Drain Current
TA =25°C
0.8
A
TA =70°C
0.65
TA =25°C
0.3
TA =70°C
0.2
PD
RJA
Maximum Power Dissipation
Thermal Resistance Junction-Ambient
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400
W
°C/W
Page 1 of 6
DN8B20KC
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
20
--
--
V
Zero Gate Voltage Drain Current(TA=25℃)
VDS=20V, VGS=0V
--
--
1
μA
Zero Gate Voltage Drain
Current(TA=125℃)
VDS=16V, VGS=0V
--
--
100
uA
IGSS
Gate-Body Leakage Current
VGS=±8V, VDS=0V
--
--
±10
uA
VGS(TH)
Gate Threshold Voltage
VDS=VGS, ID=250μA
0.35
0.6
1.0
V
RDS(ON)
Drain-Source On-State Resistance②
VGS=4.5V, ID=0.5A
--
200
300
mΩ
RDS(ON)
Drain-Source On-State Resistance②
VGS=3.3V, ID=0.3A
--
220
350
mΩ
RDS(ON)
Drain-Source On-State Resistance②
VGS=2.5V, ID=0.2A
--
250
400
mΩ
--
36
--
pF
--
9.3
--
pF
--
6.8
--
pF
--
0.8
--
nC
--
0.11
--
nC
--
0.18
--
nC
--
7
--
ns
--
10
--
ns
-
35
--
ns
--
14
--
ns
--
--
0.5
A
--
0.74
1.2
V
IDSS
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
VDS=10V, VGS=0V,
f=1MHz
VDS=10V
ID=0.5A,
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=4.5V
Switching Characteristics
td(on)
Turn on Delay Time
tr
Turn on Rise Time
td(off)
Turn Off Delay Time
tf
Turn Off Fall Time
VDD=10V,
ID=0.5A,
RG=3.3Ω,
VGS=4.5V
Source Drain Diode Characteristics
ISD
Source drain current(Body Diode)
VSD
Forward on voltage②
TA=25℃
Tj=25℃, ISD=0.3A,
VGS=0V
Notes:
① Pulse width limited by maximum allowable junction temperature
② Pulse test ; Pulse width≤300μs, duty cycle≤2%
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Page 2 of 6
DN8B20KC
Typical Characteristics
VDS, Drain -Source Voltage (V)
Fig1. Typical Output Characteristics
VGS, Gate -Source Voltage (V)
Fig3. Typical Transfer Characteristics
VSD, Source-Drain Voltage (V)
Fig5. Typical Source-Drain Diode Forward Voltage
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Tj - Junction Temperature (°C)
Fig2. Normalized Threshold Voltage Vs. Temperature
ID , Drain Current (A)
Fig4. On-Resistance vs. Drain Current and Gate
VDS, Drain -Source Voltage (V)
Fig6. Maximum Safe Operating Area
Page 3 of 6
DN8B20KC
Typical Characteristics
VDS, Drain-Source Voltage (V)
Qg, Total Gate Charge (nC)
Fig7. Typical Capacitance Vs. Drain-Source Voltage
Fig8. Typical Gate Charge Vs. Gate-Source Voltage
Pulse Width (s)
Fig9. Normalized Maximum Transient Thermal Impedance
Fig10. Switching Time Test Circuit and waveforms
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Page 4 of 6
DN8B20KC
SOT-883 Package outline
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Page 5 of 6
DN8B20KC
Important Notice and Disclaimer
DOESHARE has used reasonable care in preparing the information included in this
document, but DOESHARE does not warrant that such information is error free.
DOESHARE assumes no liability whatsoever for any damages incurred by you
resulting from errors in or omissions from the information included herein.
DOESHARE no warranty, representation or guarantee regarding the documents,
circuits and products specification, DOESHARE reservation rights to make
changes for any documents, products, circuits and specifications at any time
without notice.
Purchasers are solely responsible for the choice, selection and use of the
DOESHARE products and services described herein, and DOESHARE assumes
no liability whatsoever relating to the choice, selection or use of the products and
services described herein.
No license, express or implied, by implication or otherwise under any intellectual
property rights of DOESHARE.
Resale of DOESHARE products with provisions different from the statements
and/or technical features set forth in this document shall immediately void any
warranty granted by DOESHARE for the DOESHARE product or service described
herein and shall not create or extend in any manner whatsoever, any liability of
DOESHARE.
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Page 6 of 6
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