2N5551U

2N5551U NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 500 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter C C Symbol Min. Max. Unit DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 50 mA hFE hFE hFE 80 80 30 250 - - Collector Base Cutoff Current at VCB = 120 V ICBO - 50 nA IEBO - 50 nA V(BR)CBO 180 - V V(BR)CEO 160 - V V(BR)EBO 6 - V VCE(sat) - 0.15 0.2 V VBE(sat) - 1 1 V fT 100 300 MHz Cob - 6 pF Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Gain Bandwidth Product at VCE = 10 V, IC = 10 mA, f = 100 MHz Collector Output Capacitance at VCB = 10 V, f = 1 MHz Page 1 of 3 7/26/2012 2N5551U Power Dissipation: Ptot (mW) Fig.1 Ptot - Ta 600 500 400 300 200 100 0 0 25 100 150 Ambient Temperature: Ta ( C) O Page 2 of 3 7/26/2012 2N5551U SOT-89 PACKAGE OUTLINE Page 3 of 3 7/26/2012