BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
GENERAL DESCRIPTION
FEATURES
The BCT644 is a four-data-lane, MIPI, D-PHY
switch. This single-pole, double-throw (SPDT)
switch is optimized for switching between two
high-speed or low-power MIPI sources. The
BCT644 is designed for the MIPI specification and
allows connection to a CSI or DSI module.
APPLICATIONS
Cellular Phones, Smart Phones
Displays
Switch Type: SPDT(10x)
Signal Types: MIPI, D-PHY
VCC:1.65 to 4.5V
Input Signals: 0 to VCC
RON: 7.7Ω Typical HS MIPI
8.8Ω Typical LP MIPI
ΔRON: 0.6Ω Typical
RON_FLAT: 0.3Ω Typical
ICCZ: 0.5uA Maximum
ICC: 26uA Typical
QIRR:-32dB Typical
XTALK:-45dB Typical
Bandwidth:1.6GHz Typical
CON:5.2pF
36-Ball WLCSP Package
ORDERING INFORMATION
Order Number
Package Type
Temperature
Range
Marking
QTY/Reel
BCT644EWX-TR
WLCSP-36
-40°C to +85°C
644
3000
REV1.8
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BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
TYPICAL OPERATING CIRCUIT
CLK
MIPI
Module #1
CSI/DSI
Data[1:4]
CLK
BCT644
4-Data Lane
MIPI Switch
CLK
MIPI
Module #2
CSI/DSI
Data[1:4]
Processor
Data[1:4]
Figure 1.
Application Block Diagram
ABSOLUTE MAXIMUM RATINGS
CAUTION
Supply Voltage (VCC)…............................-0.5V to +5.25V
This integrated circuit can be damaged by ESD if you don’t
(1)
DC Input Voltage (SEL, /OE) ....................-0.5V to VCCV
pay attention to ESD protection. Broadchip recommends
DC Switch I/O Voltage...............................-0.5V to 5.25V
that all integrated circuits be handled with appropriate
DC Input Diode Current.........................................-50mA
precautions. Failure to observe proper handling and
DC Output Current ……….....................................50mA
installation procedures can cause damage. ESD damage
Storage Temperature Range..................-65℃ to +150℃
can range from subtle performance degradation to
Junction Temperature.............................................150℃
complete device failure. Precision integrated circuits may
Operating Temperature Range.................-40℃ to +85℃
be more susceptible to damage because very small
Lead Temperature (Soldering, 10 sec)....................260℃
parametric changes could cause the device not to meet its
ESD Susceptibility
published specifications.
All Pins......................................................................4KV
I/O to GND................................................................4KV
Broadchip reserves the right to make any change in circuit
Power to GND.......................... .................................8KV
design, specification or other related things if necessary
without notice at any time. Please contact Broadchip sales
office to get the latest datasheet.
REV1.8
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BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
RECOMMENDED OPERATING CONDTIONS
The Recommended Operating Conditions table defines the conditions for actual device operation.
Recommended operating conditions are specified to ensure optimal performance to the datasheet
specifications.
Symbol
Parameter
Min.
Max.
Unit
VCC
Supply Voltage
1.65
4.5
V
(2)
VCTRL
Control Input Voltage(SEL, /OE)
0
VCC
V
Switch I/O Voltage (CLKn, HS Mode
0.1
0.3
VSW
V
CLKAn, CLKBn, Dn, DAn, DBn)
LP Mode
0
1.2
℃
TA
Operating Temperature
-40
+85
Notes:
1. The input and output negative ratings maybe exceed if the input and output diode current ratings are observed.
2. The control input must be held HIGH or LOW; it must not float.
PIN CONFIGURATION
Figure2. Pin Configuration(Top Through View)
REV1.8
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BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
Ball
A1
A2
A3
A4
A5
A6
B1
B2
B3
B4
B5
B6
C1
C2
C3
C4
C5
C6
D1
D2
D3
D4
D5
D6
E1
E2
E3
E4
E5
E6
F1
F2
F3
F4
F5
F6
Table 1. Ball-to-Pin Mappings
Pin Name
CLKN
CLKP
CLKAP
DA1P
DA2P
DA2N
D1N
D1P
CLKAN
DA1N
DA3P
DA3N
D2N
D2P
NC
VCC
DA4P
DA4N
D3N
D3P
GND
NC
CLKBN
CLKBP
D4N
D4P
DB4P
DB3P
DB1N
DB1P
/OE
SEL
DB4N
DB3N
DB2N
DB2P
TRUTH TABLE
SEL
/OE
Function
LOW
LOW
CLKP=CLKAP, CLKN=CLKAN, DN(P/N)=DAN(P/N)
HIGH
LOW
CLKP=CLKBP, CLKN=CLKBN, DN(P/N)=DBN(P/N)
X
HIGH
DAN(P/N), DBN(P/N) Data Ports High Impedance
REV1.8
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BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
PIN DESCRIPTION
Pin Name
Description
CLKP/N
Common Clock Path
D1P/N
Common Data Path1
D2P/N
Common Data Path2
D3P/N
Common Data Path3
D4P/N
Common Data Path4
CLKAP/N
A-Side Clock Path
DA1P/N
A-Side Data Path 1
DA2P/N
A-Side Data Path 2
DA3P/N
A-Side Data Path 3
DA4P/N
A-Side Data Path 4
CLKBP/N
B-Side Clock Path
DB1P/N
B-Side Data Path 1
DB2P/N
B-Side Data Path 2
DB3P/N
B-Side Data Path 3
DB4P/N
B-Side Data Path 4
SEL=0
CLKP=CLKAP,
CLKN=CLKAN,
DN(P/N)=DAN(P/N)
SEL=1
CLKP=CLKBP,
CLKN=CLKBN,
DN(P/N)=DBN(P/N)
SEL
Figure 3. Analog Symbol
/OE
Output Enable
VCC
Power
GND
Ground
NC
No Connect
REV1.8
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BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
DC ELECTRICAL CHARACTERISTICS
( All typical values are TA = 25℃, unless otherwise specified.)
PARAMETER
SYM
Control Input Leakage(SEL,
/OE)
IIN
Input Voltage High
Input Voltage Low
VCC (V)
MIN
VSW=0 to 4.3V
1.65 to 4.5
-100
VIH
VIN=0 to VCC
1.65 to 4.5
1.0
VIL
VIN=0 to VCC
1.65 to 4.5
INO(OFF)
INC(OFF)
CLKn, Dn=0.3V;
VCC-0.3V; CLKAn, DAn,
or CLKBn;
DBn=VCC-0.3V, 0.3V, or
Floating; /OE=0V
1.65 to 4.5
IA(ON)
CLKn, Dn=0.3V;
Vcc-0.3V; CLKAn, DAn,
or CLKBn;
DBn=VCC-0.3V, 0.3V, or
Floating; /OE=0V
Power-Off Leakage Current
IOFF
CLKn, Dn or CLKAn,
DAn, or CLKBn; DBn;
VIN=0V to 4.5V; VCC=0V
Off-State Leakage
IOZ
0≤CLKn, Dn, CLKAn,
DAn, CLKBn, DBn≤
3.6V; /OE=High
Off leakage Current of Port
CLKAn, DAn, CLKBn, DBn
On leakage Current of
Common Ports(CLKAn, Dn)
CONDITIONS
TYP
MAX UNITS
100
nA
V
0.4
V
-100
100
nA
1.65 to 4.5
-100
100
nA
0
-100
100
nA
4.5
-100
100
nA
ION=-10mA, /OE=0V,
RON_MIPI SEL=VCC or 0V, CLKA, B,
DBn or DAn=0.1, 0.2,
_HS
0.3
1.8--4.5
7.7
Ω
ION=-10mA, /OE=0V,
Switch On Resistance for LP RON_MIPI
SEL=VCC or 0V, CLKA, B,
MIPI Applications(3)
_LP
DBn or DAn=0, 0.6, 1.2V
1.8-4.5
8.8
Ω
ION=-10mA, /OE=0V,
SEL=VCC or 0V, CLKA, B,
DBn or DAn=0.1, 0.2,
0.3
1.8-4.5
0.6
Ω
Switch On Resistance for
HS MIPI Applications(3)
On Resistance Matching
Between HS MIPI
Channels(4)
Δ
RON_MIPI
_HS
REV1.8
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BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
DC ELECTRICAL CHARACTERISTICS
( All typical values are TA = 25℃, unless otherwise specified.)
PARAMETER
CONDITIONS
VCC (V)
ION=-10mA, /OE=0V,
SEL=VCC or 0V, CLKA, B,
DBn or DAn=0.0, 0.6,
1.2V
1.8-4.5
0.6
Ω
On Resistance Flatness for RON_FLA
HS MIPI Signals(4)
T_MIPI_HS
ION=-10mA, /OE=0V,
SEL=VCC or 0V, CLKA, B,
DBn or DAn=0.1, 0.2,
0.3
1.8-4.5
0.3
Ω
On Resistance Flatness for RON_FLA
LP MIPI Signals(4)
T_MIPI_LP
ION=-10mA, /OE=0V,
SEL=VCC or 0V, CLKA, B,
DBn or DAn=0.0, 0.6,
1.2V
1.8-4.5
1.5
Ω
Quiescent Hi-Z Supply
Current
ICCZ
VIN=0 or VCC, IOUT=0
4.5
Quiescent Supply Current
ICC
VIN=0 or VCC, IOUT=0
2.8
Increase in ICC Current Per
Control Voltage and VCC
ICCT
VSEL, /OE=1.65V
On Resistance Matching
Between LP MIPI
Channels(4)
SYM
Δ
RON_MIPI
_LP
MIN
TYP
MAX UNITS
0.5
26
uA
uA
4.5
4
2.5
0.1
uA
Notes:
3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is
determined by the lower of the voltage on the two (A or B ports).
4. Guaranteed by characterization
AC ELECTRICAL CHARACTERISTICS
( All values are for VCC=3.3V at TA=25℃ unless otherwise specified.)
PARAMETER
SYM
CONDITIONS
VCC (V)
MIN
TYP
MAX UNITS
Initalization Time VCC to
Output(5)
tINIT
RL=50Ω, CL=5pF,
VSW=1.2V
2.5 to 4.5
100
1.8
150
Enable Turn-On Time, /OE
to Output
tEN
RL=50Ω, CL=5pF,
VSW=1.2V
2.5 to 4.5
120
200
1.8
250
500
Disable Turn-off Time, /OE
to Output
tDIS
RL=50Ω, CL=5pF,
VSW=1.2V
2.5 to 4.5
25
50
1.8
50
90
Turn-On Time
SEL to Output
tON
RL=50Ω, CL=5pF,
VSW=1.2V
2.5 to 4.5
50
100
1.8
75
125
REV1.8
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us
ns
ns
ns
BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
AC ELECTRICAL CHARACTERISTICS
( All values are for VCC=3.3V at TA=25℃ unless otherwise specified.)
PARAMETER
SYM
CONDITIONS
Turn-Off Time
SEL to Output
tOFF
RL=50Ω, CL=5pF,
VSW=1.2V
Break-Before-Make Time
tBBM
CL=5pF, RL=50Ω,
VSW=1.2V
OIRR
f=750MHz, RL=50Ω,
/OE=VCC ,VSW =-1dBm
(200mVPP)
Xtalk
f=750MHz, RL=50Ω,
/OE=VCC ,VSW =-1dBm
(200mVPP)
Off Isolation for MIPI
Crosstalk for MIPI
(5)
(5)
-3db Bandwidth(5)
BW
CL=0pF, RL=50Ω
VCC (V)
MIN
TYP
MAX UNITS
2.5 to 4.5
50
200
1.8
200
325
10
ns
50
ns
1.65 to 4.5
-32
dB
1.65 to 4.5
-45
dB
3.0
1.6
GHz
Note:
5. Guaranteed by characterization.
HIGH-SPEED-RELATED AC ELECTRICAL CHARACTERISTICS
PARAMETER
Channel-to-Channel
Single-Ended Skew(6)
Skew of Opposite
Transitions of the Same
Output(6)
SYM
CONDITIONS
VCC (V)
MIN
TYP
MAX UNITS
tSK(O)
TDR-Based Method
(VSW =0.2VPP,
CL=CON)
3.3
6
20
ps
tSK(P)
TDR-Based Method
(VSW =0.2VPP,
CL=CON)
3.3
6
20
ps
Notes:
6. Guaranteed by characterization.
CAPACITANCE
PARAMETER
Control Pin Input
Capacitance(7)
SYM
CIN
CONDITIONS
VCC=0V, f=1MHz
VCC (V)
MIN
TYP
0
2.1
Output On Capacitance(7)
CON
VCC=3.3V, /OE=0V,
f=1MHz
3.3
5.2
Output Off Capacitance(7)
COFF
VCC and /OE=3.3V,
f=1MHz
3.3
2.0
MAX UNITS
pF
Note:
7. Guaranteed by characterization.
REV1.8
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BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
TEST DIAGRAMS
Figure 4. On Resistance
Figure 6. AC Test Circuit Board
Figure 8. Propagation Delay(tRtF-500ps)
Figure 10. Channel Off Capacitance
Figure 5. Off Leakage
Figure 7. Turn-On/Turn-Off waveform
Figure 9. Channel to Channel Skew
Figure 11. Channel On Capacitance
REV1.8
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BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
TEST DIAGRAMS(CONTINUED)
Figure 12. Break-Before-Make Interval Timing
Figure 13. Bandwidth
Figure 14. Channel Off Isolation
Figure 15. Non-Adjacent Channel-to-Channel Crosstalk
REV1.8
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Copyright © BROADCHIP TECHNOLOGY CO., LTD
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BCT644
2:1 MIPI D-PHY(1.5Gbps)
4-Data Lane Switch
PACKAGE OUTLINE DIMENSIONS
Product-Specific Dimensions
Product
Package
BCT644EWX-TR
36-Ball WLCSP, 2.375mm x 2.375 mm,
0.4mm Pitch
D
E
X
Y
2.375mm
2.375mm
0.18mm
0.18mm
REV1.8
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