BCT4899ETE-TR

BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch GENERAL DESCRIPTION FEATURES The BCT4899 is a high-speed, low-voltage, dual-independent double–pole double-throw (DPDT) COMS analog switch that is designed to operate from a single +1.8V to +5.5V power supply. It features high-bandwidth (500MHz) and low on-resistance (5Ω TYP). The BCT4899 is configured as a dual double-pole double-throw(DPDT) device with two logic control inputs that control two multiplexer/demultiplexer each. The configuration can also be used as a dual differential 2-to-1 multiplexer/demultiplexer. BCT4899 is available in Green TQFN-3×3-16L and TQFN-2.5×2.5-16L and UTQFN1.8x2.6-16L         Low Voltage Operation: 1.8V to 5.5V On-Resistance: 5Ω(TYP) -3dB Bandwidth: 500MHz Rail-to-Rail Input and Output Operation High Off-Isolation: -55dB at 10MHz Low Crosstalk: -60dB at 10MHz Low Power Consumption(＜0.01uW) -40℃ to +85℃ Operating Temperature Range APPLICATIONS        Communication Systems Portable Instrumentation Audio and Video Switching PCMCIA Cards Computer Peripherals Modems PDAs ORDERING INFORMATION Order Number Package Type Temperature Range Marking QTY/Reel BCT4899ETE-TR TQFN3x3-16L -40°C to +85°C 4899 XXXXX 3000 BCT4899EGE-TR QFN 2.5x2.5-16L -40°C to +85°C 4899 XXXXX 3000 BCT4899EFE-TR UTQFN1.8x2.6-16L -40°C to +85°C 4899 XXXXX 3000 Mark Note: "4899" in Marking is Product code "XXXXX" in Marking will be appeared as the batch code. REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 1 BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch NC1 1 INA 2 COM1 NO1 VCC NC4 COM1 NO1 VCC NC4 PIN CONFIGURATION (Top View) 16 15 14 13 16 15 14 13 12 COM4 NC1 1 12 COM4 11 NO4 INA 2 11 NO4 GND 10 INB COM2 4 9 NC3 COM2 4 9 NC3 6 7 COM3 8 TQFN3x3-16L QFN 2.5x2.5-16L 5 6 7 8 COM3 5 NO3 3 GND NO2 NC2 INB NO3 10 GND 3 NC2 NO2 UTQFN1.8x2.6-16L PIN DESCRIPTIONS Pin Name Function 1 NC1 Normally Closed Terminal Switch 1 2 INA Select Input, control switch 1 and switch 2 3 NO2 Normally Open Terminal Switch 2 4 COM2 5 NC2 Normally Closed Terminal Switch 2 6 GND Ground 7 NO3 Normally Open Terminal Switch 3 8 COM3 9 NC3 Normally Closed Terminal Switch 3 10 INB Select Input, control switch 3 and switch 4 11 NO4 Normally Open Terminal Switch 4 12 COM4 13 NC4 Normally Closed Terminal Switch 4 14 VCC Positive Power Supply 15 NO1 Normally Open Terminal Switch 1 16 COM1 Common Terminal Switch 2 Common Terminal Switch 3 Common Terminal Switch 4 Common Terminal Switch 1 REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 2 BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch LOGIC DIAGRAM Figure1. Block Digram TRUTH TABLE INA SWITCH STATE 0 NC1 = COM1, NC2 = COM2 1 NO1 = COM1, NO2 = COM2 INB SWITCH STATE 0 NC3 = COM3, NC4 = COM4 1 NO3 = COM3, NO4 = COM4 REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 3 BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch ABSOLUTE MAXIMUM RATINGS CAUTION VCC, INA，INB to GND.................................-0.3V to +6.0V This integrated circuit can be damaged by ESD if you don’t All Other Pins to GND (Note 1)..........-0.3V to (VCC + 0.3V) pay attention to ESD protection. Broadchip recommends Continuous Current (NOx, NCx, COM_).............. ±100mA that all integrated circuits be handled with appropriate Operating Temperature Range.................-40°C to +85°C precautions. Failure to observe proper handling and Storage Temperature Range...................-65°C to +150°C installation procedures can cause damage. ESD damage Junction can range from subtle performance degradation to Lead Temperature..........................................+150°C Temperature (soldering, 10s)...................+260°C complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. Broadchip reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. Please contact Broadchip sales office to get the latest datasheet. RECOMMENDED OPERATING CONDTIONS The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Symbol Parameter Min. Max. Unit VCC Supply Voltage 1.5 5.5 V VCTRL Control Input Voltage(INA,INB)(2) 0 VCC V Switch I/O Voltage VSW 0 VCC V ℃ TA Operating Temperature -40 +85 Notes： 1. The input and output negative ratings maybe exceed if the input and output diode current ratings are observed. 2. The control input must be held HIGH or LOW; it must not float. REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 4 BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch DC ELECTRICAL CHARACTERISTICS Unless otherwise noted. TA = +25°C. (Note 1) PARAMETER Supply Voltage SYM VCC CONDITIONS Quiescent Supply Current ICC INA=0V or VCC, INB=0V or VCC, IOUT=0 Switch On Resistance RON 0V≤VSW≤VCC, ISW=10mA, On Resistance Matching Between Channels ΔRON VSW=0V, ISW=10mA, Flatness for On Resistance ΔRONF 0V ≤VSW≤VCC, ISW=10mA, VCC (V) MIN 1.8 TYP 5.5 MAX UNITS 5.5 V 1 uA 4.5 5.0 8.0 Ω 2.7 12 22 Ω 4.5 0.3 1.0 Ω 2.7 1.0 3.0 Ω 4.5 2.0 3.0 Ω 2.7 12 18 Ω Off leakage Current of Open Data Paths (NCx and NOx Pin) IOFF 0V≤VSW≤VCC 1.8 to 5.5 -1 1 uA On leakage Current of Close Data Paths (NCx,NOx and COMx Pin) ION 0V≤VSW≤VCC 1.8 to 5.5 -1 1 uA Input Voltage High (INA, INB) VIH 1.8 to 5.5 1.5 Input Voltage Low (INA, INB) VIL 1.8 to 5.5 V 0.4 REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 5 V BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch AC ELECTRICAL CHARACTERISTICS Unless otherwise noted. TA = +25°C. (Note 1) PARAMETER SYM CONDITIONS VCC (V) MIN TYP MAX UNITS Turn-On Time tON RL=300Ω, CL=35pF, VSW=0 to 1.5 V 3.0 35 ns Turn-Off Time tOFF RL=300Ω, CL=35pF, VSW=0 to 1.5 V 3.0 45 ns Break-Before-Make Time tBBM VNC= VNC =1.5 V , RL=300Ω, CL=35pF 3.0 6 ns VG = 0V, RG = 0Ω, CL = 1nF 3.0 3 Charge Injection Q -3db Bandwidth(2) BW VS=0dBm,RL=50Ω, CL=0pF 3.0 500 MHz Off Isolation (2) OIRR VS=0dBm,f=10MHz, RL=50Ω 3.0 -55 dB Crosstalk (2) XTALK VS=0dBm,f=10MHz, RL=50Ω 3.0 -60 dB Output On Capacitance(2) CON /OE=0V, f=1MHz 3.0 10 pF Output Off Capacitance(2) COFF /OE=3.3V, f=1MHz 3.0 6 pF Note 1: Devices are 100% tested at TA = +25°C. Limits across the full temperature range are guaranteed by design and correlation. Note 2:Guaranteed by characterization. REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 6 BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch TEST CIRCUITS Figure 1. Switching Time Figure 2. Break-Before-Make Interval Figure 3. Charge Injection REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 7 BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch Figure 4. Off Isolation Figure 5. Channel-to-Channel Crosstalk Figure 6. -3dB Bandwidth REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 8 BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch PACKAGE OUTLINE DIMENSIONS TQFN 3x3-16L REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 9 BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch TQFN 2.5x2.5-16L REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 10 BCT4899 5Ω ，High Speed，Low Voltage Dual DPDT Analog Switch UTQFN 1.8x2.6 -16L REV1.0 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 11