BCT4567EGE-TR

BCT4567 Low-Power, Dual SIM Card Analog Switch BCT4567 Low-Power, Dual SIM Card Analog Switch GENERAL DESCRIPTION FEATURES The BCT4567 is a quad-SPDT switch with one common control inputs targeted at dual SIM card multiplexing. It is optimized for switching the WLAN-SIM data and control signals and dedicates one channel as a supply-source switch.     The switches are fully bi-directional, allowing both multiplexing and de-multiplexing operation. Break-before-make operation is guaranteed. The device operates from a +1.65V to +4.5V supply and over the extended -40°C to +85°C temperature range. It is offered in 16-pin 3mm x 3mm TQFN package or 16-pin 1.8mm x 2.6mm UTQFN package.       Low 0.5Ω RON @VCC=2.7V 0.06Ω On-Resistance Flatness Excellent 0.05Ω On-Resistance Matching Wide VCC Operating Range: 1.65 V to 4.5 V Rail-to-Rail Signal Switching Range Fast Switching Speed：20nsTYP at 3.3V High Off Isolation: -66dB Crosstalk Rejection: -86dB -3dB bandwidth: 100MHz Space-Saving, TQFN 3x3-16L or UTQFN 1.8x2.6-16L Package APPLICATIONS Dual SIM Card Switch Cell Phones Pad Digital Cameras PDAs Notebook ORDERING INFORMATION Ordering Code Package Description BCT4567EGE-TR TQFN3x3-16L –40°C to +85°C 4567 3000 BCT4567EFE-TR UTQFN1.8x2.6-16L –40°C to +85°C 4567 3000 Temp Range Top Marking QTY/Reel REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 1 BCT4567 Low-Power, Dual SIM Card Analog Switch Pin Configurations Pin Description Pin Name 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1VSIM SEL 2RST RST 1RST GND 2CLK CLK 1CLK NC 2DAT DAT 1DAT VCC 2VSIM VSIM Function SIM supply output 2 Select input RST Normally Open Terminal RST Common Terminal RST Normally Closed Terminal Ground CLK Normally Open Terminal CLK Common Terminal CLK Normally Closed Terminal Not Connect DAT Normally Open Terminal DAT Common Terminal DAT Normally Closed Terminal Power Supply SIM supply output 1 SIM supply input REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 2 BCT4567 Low-Power, Dual SIM Card Analog Switch Truth Table SEL SWITCH STATE 0 1DAT = DAT, 1RST = RST, 1CLK = CLK, 1VSIM = VSIM 1 2DAT = DAT, 2RST = RST, 2CLK = CLK, 2VSIM = VSIM Absolute Maximum Ratings VCC, SEL to GND....................................................................................................-0.3V to +6.0V All Other Pins to GND……….. ………………...............................................-0.3V to (VCC + 0.3V) Continuous Current …………………………………………………………………….…….... ±400mA Peak Current (pulsed at 1ms, 10% duty cycle) ….……………………………….................±500mA Continuous Power Dissipation (TA = +70°C) ( 15.6mW/°C above +70°C) ........................1.25W Operating Temperature Range ...............................................................................-40°C to +85°C Storage Temperature Range.................................................................................-65°C to +150°C Junction Temperature.............................................................................................................+150°C Lead Temperature (soldering, 10s).........................................................................................+260°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 3 BCT4567 Low-Power, Dual SIM Card Analog Switch Electrical Characteristics (unless otherwise noted. Typical values are at VCC = 3.3V, TA = +25°C. (Note 2) Parameter Symbol Conditions Min Typ Max Units 4.5 V 1.0 uA VCC V POWER SUPPLY Supply Voltage Range Supply Current VCC ICC 1.65 VCNTRL = 0 or VCC, IOUT = 0 ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Match On-Resistance Flatness VSW RON Switch I/O Voltage ION = -100 mA Figure 9 ΔRON RFLAT ION = -100 mA Figure 9 ION = -100 mA Figure 9 0 VCC= 1.8V VSW = 0, 1.8 V 0.8 VCC= 2.7V VSW = 0, 2.3 V 0.5 VCC= 1.8V VSW = 0, 1.8 V 0.1 VCC= 2.7V VSW = 0, 2.3 V 0.05 VCC= 1.8V VSW = 0, 1.8 V 0.12 VCC= 2.7V VSW = 0, 2.3 V 0.06 Ω Ω Ω Off-Leakage Current IOFF VCC= 4.3V, nRST, nDAT, nCLK, nVSIM = 0.3 V or 3.6 V Figure 10 -1 1 uA On-Leakage Current ION VCC= 4.3V, RST, DAT, CLK, VSIM = 0.3 V or 3.6 V -1 1 uA VCC=1.65V 4.5V, VCC=1.65V 4.5V, 1.7 SEL DIGITAL INPUTS Input-Logic High VIH Input-Logic Low VIL Input Current IIN Leakage VIN = 0 or VCC to to -1 V 0.4 V 1 uA REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 4 BCT4567 Low-Power, Dual SIM Card Analog Switch Electrical Characteristics (continued) (unless otherwise noted. Typical values are at VCC = 3.3V, TA = +25°C.) (2) Parameter Symbol Conditions Min Typ Max 20 30 Units DYNAMIC CHARACTERISTICS Turn-On Time Sel to Output (VSIM,DAT,CLK, RST) Turn-Off Time Sel to Output (VSIM,DAT,CLK,RST) Break-Before-Make Time (VSIM,DAT,CLK,R ST) TON TOFF TBBM RL = 50 Ω, CL = 35 Pf, VSW = 1.5 V, Figure 11, Figure 12 TA = +25°C RL = 50 Ω, CL = 35 pF, VSW = 1.5 V, Figure 11, Figure 12 TA = +25°C RL = 50 Ω, CL = 35 pF VSW1 = VSW2 = 1.5 V Figure 15 TA = TMIN to TMAX 50 15 TA = TMIN to TMAX TA = +25°C TA = TMIN to TMAX 40 50 2 ns ns 15 ns 2 CL = 50 pF, RGEN = 0 Ω, VGEN = 0 V 100 pC BW RL = 50 Ω, CL = 5 pF Figure 16 100 MHz Off-Isolation (VSIM,DAT,CLK,RST) VISO RL = 50 Ω, f = 100KHz Figure 17 -66 dB Crosstalk (VSIM,DAT,CLK,RST) VCT RL = 50 Ω, f = 100KHz Figure 18 -86 dB VSIM,RST,CLK, DAT Off Capacitance COFF VCC = 3.3 V, Figure 19 8 pF VSIM,RST,CLK,DAT On Capacitance CON VCC = 3.3 V, f = 1 MHz Figure 20 25 pF Charge Injection Q On-Channel Bandwidth -3dB (VSIM,DAT,CL K,RST) Note 2: Devices are 100% tested at TA = +25°C. Limits across the full temperature range are guaranteed by design and correlation. REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 5 BCT4567 Low-Power, Dual SIM Card Analog Switch Test Diagrams /Timing Diagrams REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 6 BCT4567 Low-Power, Dual SIM Card Analog Switch Test Diagrams /Timing Diagrams REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 7 BCT4567 Low-Power, Dual SIM Card Analog Switch Test Diagrams /Timing Diagrams REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 8 BCT4567 Low-Power, Dual SIM Card Analog Switch Typical Operating Characteristics (VCC = 3V, TA = +25°C, unless otherwise noted.) ON-RESISTANCE vs. COM_ VOLTAGE ON-RESISTANCE vs. COM_ VOLTAGE ON-RESISTANCE vs. COM_ VOLTAGE AND TEMPERATURE SUPPLY CURRENT vs. TEMPERATURE NO /NC OFF-LEAKAGE CURRENT vs. TEMPERATURE COM ON-LEAKAGE CURRENT vs. TEMPERATURE REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 9 BCT4567 Low-Power, Dual SIM Card Analog Switch TURN-ON/OFF TIME vs. SUPPLY VOLTAGE TURN-ON/OFF TIME vs. TEMPERATURE CHARGE INJECTION vs. COM_ VOLTAGE COM_ ON-CAPACITANCE vs. COM_ VOLTAGE NO_ OFF-CAPACITANCE vs. NO_ VOLTAGE NO_ ON-CAPACITANCE vs. NO_ VOLTAGE REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 10 BCT4567 Low-Power, Dual SIM Card Analog Switch ON-RESPONSE vs. FREQUENCY OFF-ISOLATION AND CROSSTALK vs. FREQUENCY REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 11 BCT4567 Low-Power, Dual SIM Card Analog Switch PACKAGE OUTLINE DIMENSIONS: TQFN 3x3 -16L REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 12 BCT4567 Low-Power, Dual SIM Card Analog Switch PACKAGE OUTLINE DIMENSIONS: UTQFN 1.8x2.6 -16L REV1.3 www.broadchip.com Copyright © BROADCHIP TECHNOLOGY CO., LTD 13