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BCT4223ETB-TR

BCT4223ETB-TR

  • 厂商:

    BROADCHIP(广芯)

  • 封装:

    WQFN10_1.8X1.4MM

  • 描述:

    BCT4223ETB-TR

  • 数据手册
  • 价格&库存
BCT4223ETB-TR 数据手册
May, 2008, REV0.1 BCT4223 Low-Voltage, 0.4Ω Dual-SPDT Analog Switch General Description The BCT4223 is a high-performance, dual single-pole double-throw (SPDT) analog switch. Specified over a wide operating power supply voltage range, 1.65V to 5.0V, Targeted applications include battery powered equipment that benefit from ultra low ON-resistance(0.4Ω) and fast switching speeds. Break-before-make switching prevents both switches being enabled simultaneously. This eliminates signal disruption during switching. Applications      Cell Phones PDAs Portable Instrumentation Battery Powered Communications Computer Peripherals Connection Diagram (Top View) Features ♦ Low ON Resistance: 0.4-ohms at 5.0V ♦ Wide VCC Range: 1.65V to 5.0V ♦ Rail-to-Rail Signal Range ♦ ON-Resistance Matching: 0.04 Ω (TYP) ♦ ON-Resistance Flatness: 0.08Ω (TYP) ♦ High Off Isolation: 57dB at 10MHz ♦ 54dB (10MHz) Crosstalk Rejection Reduces Signal Distortion ♦ Break-Before-Make Switching ♦ -3dB Bandwidth: 70 MHz ♦ Extended Industrial Temperature Range: –40°C to 85°C ♦ Improved Direct Replacement for NLAS5223 ♦ Packaging (Pb-free & Green available): Pin Description Pin Number Name Description 2 , 10 NO1,NO2 Data Port 6 GND Ground 5,7 NC1,NC2 Data Port (Normally Closed) 3,9 COM1,COM2 Common Output/Data Port 1 VCC Positive Power Supply 4,8 IN1,IN2 Logic Control Logic Function Table Logic Input (S) Function 0 NC1/NC2 Connected to COM1/COM2 1 NO1/NO2 Connected to COM1/COM2 Ordering Information Ordering Code Package Description Temp Range Top Marking BCT4223ETB 10-pin WQFN 1.4X1.8 .–40°C to +85°C AFX Notes: X=month www.broadchip.com May, 2008, REV0.1 Low-Voltage, 0.4Ω Dual-SPDT Analog Switch Maximum Ratings Symbol Parameter Value Unit VCC Positive DC Supply Voltage −0.5 to +5.25 V VIS Analog Input Voltage (VNO, VNC, or VCOM) −0.5 ≤ VIS ≤ VCC + 0.5 V VIN Digital Select Input Voltage −0.5 ≤ VIN ≤ +5.25 V Ianl1 Continuous DC Current from COM to NC/NO ±300 mA Ianl-pk1 Peak Current from COM to NC/NO, 10 Duty Cycle (Note 1) ±500 mA Iclmp Continuous DC Current into COM/NO/NC with Respect to VCC or GND ±100 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics (Vcc = +4.2V, GND = 0V, VIH = +1.6V, VIL = +0.6V, TA = - 40°C to + 85°C. Typical values are at Vcc = +4.2V, TA = + 25°C, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS VCC V 0.65 Ω 0.75 Ω 0.15 Ω 0.2 Ω 0.12 Ω 0.2 Ω 1 µA 1 µA ANALOG SWITCH Analog Signal Range VNO, VNC, VCOM On-Resistance RON Vcc = 4.2 V, VNO, VNC or VCOM = 1 V, ICOM = -100 mA, Test Circuit 1 On-Resistance Match Between Channels ∆RON Vcc = 4.2 V, VNO, VNC or VCOM = 1 V, ICOM = -100 mA, Test Circuit 1 On-Resistance Flatness RFLAT(ON) Vcc = 4.2 V, VNO, VNC or VCOM = 1 V, ICOM = -100 mA, Test Circuit 1 Source OFF Leakage current Channel ON Leakage current INC(OFF), INO(OFF) INC(ON), INO(ON), ICOM(ON) Vcc = 4.2 V, VNO or VNC = 3.3 V/ 0.3 V, VCOM = 0.3 V/ 3.3 V - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C - 40°C to +85°C Vcc = 4.2 V, VCOM = 0.3 V/ 3.3 V, VNO or VNC = 0.3 V/ 3.3 V, or floating - 40°C to +85°C 0 0.4 0.04 0.08 DIGITAL INPUTS Input High Voltage VINH Input Low Voltage VINL Input Leakage Current IIN Vcc = 4.2 V, VIN = 0 V or 4.2 V - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C 1.6 V 0.5 V 1 µA DYNAMIC CHARACTERISTICS Turn-On Time tON VIN = 2.1 V to 0 V, RL = 50 Ω, CL = 35 pF, VNO1 or VNC1 = VNO2 or VNC2 = 2.1 V, Test Circuit2 +25°C 88 ns Turn-Off Time tOFF VIN = 2.1 V to 0 V, RL = 50 Ω, CL = 35 pF, VNO1 or VNC1 = VNO2 or VNC2 = 2.1 V, Test Circuit2 +25°C 16 ns Break-Before-Make Time Delay tD VIN = 2.1 V to 0 V, RL = 50 Ω, CL = 35 pF, VNO1 or VNC1 = VNO2 or VNC2 = 2.1 V, Test Circuit3 +25°C 6.0 ns Off Isolation OISO VBIAS = 2.1 V, VIN = 0 dBm, Test Circuit4 100KHz +25°C -78 dB 1MHz +25°C -58 dB Channel-to-Channel XTALK VBIAS = 2.1 V, VIN = 0 100KHz +25°C -103 dB www.broadchip.com May, 2008, REV0.1 Crosstalk Bandwidth –3 dB Charge Injection Select Input to Common I/O Channel ON Capacitance POWER REQUIREMENTS BW Q dBm, Test Circuit5 1MHz VBIAS = 2.1 V, VIN = 0 dBm, Test Circuit6 VNO1 or VNC1 = VNO2 or VNC2 = 0 V, CL = 1.0 nF, Test Circuit7 CON Power Supply Range VCC Power Supply Current I+ VCC = 4.2 V, VIN = 0 V or Vcc +25°C -90 dB +25°C 70 MHz +25°C 4.0 pC +25°C 106 pF - 40°C to +85°C - 40°C to +85°C 1.8 4.2 V 1 µA MAX UNITS VCC V 0.7 Ω 0.8 Ω 0.15 Ω 0.2 Ω 0.18 Ω 0.2 Ω Electrical Characteristics (Vcc = +2.7V to +3.6V, GND = 0V, VIH = +1.6V, VIL = +0.4V, TA = - 40°C to + 85°C. Typical values are at Vcc = +3.0V, TA = + 25°C, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP MIN TPY ANALOG SWITCH Analog Signal Range VNO, VNC, VCOM - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C On-Resistance RON Vcc = 2.7 V, VNO, VNC or VCOM = 1 V, ICOM = -100 mA, Test Circuit 1 On-Resistance Match Between Channels ∆RON Vcc = 2.7 V, VNO, VNC or VCOM = 1 V, ICOM = -100 mA, Test Circuit 1 On-Resistance Flatness RFLAT(ON) Vcc = 2.7 V, VNO, VNC or VCOM = 1 V, ICOM = -100 mA, Test Circuit 1 Source OFF Leakage current INC(OFF), INO(OFF) Vcc = 3.6 V, VNO or VNC = 3.3 V / 0.3 V, VCOM = 0.3 V/ 3.3 V - 40°C to +85°C 1 µA Channel ON Leakage current INC(ON), INO(ON), ICOM(ON) Vcc = 3.6 V, VCOM = 0.3 V/ 3.3 V, VNO or VNC = 0.3 V/ 3.3 V, or floating - 40°C to +85°C 1 µA 0 0.5 0.03 0.1 DIGITAL INPUTS Input High Voltage VINH Input Low Voltage VINL Input Leakage Current IIN Vcc = 2.7 V, VIN = 0 V or 2.7 V - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C 1.5 V 0.4 V 1 µA DYNAMIC CHARACTERISTICS Turn-On Time tON VIN =1.5 V to 0 V, RL = 50 Ω, CL = 35 pF, VNO1 or VNC1 = VNO2 or VNC2 = 1.5 V, Test Circuit2 +25°C 100 ns Turn-Off Time tOFF VIN = 1.5 V to 0 V, RL = 50 Ω, CL = 35 pF, VNO1 or VNC1 = VNO2 or VNC2 = 1.5 V, Test Circuit2 +25°C 20 ns Break-Before-Make Time Delay tD VIN = 1.5 V to 0 V, RL = 50 Ω, CL = 35 pF, VNO1 or VNC1 = VNO2 or VNC2 =1.5 V, Test Circuit3 +25°C 9.2 ns Off Isolation OISO VBIAS = 2.1 V, VIN = 0 dBm, Test Circuit4 100KHz +25°C -78 dB 1MHz +25°C -58 dB Channel-to-Channel Crosstalk XTALK VBIAS = 2.1 V, VIN = 0 dBm, Test Circuit5 100KHz +25°C -103 dB +25°C -90 dB Bandwidth –3 dB BW +25°C 70 MHz 1MHz VBIAS = 2.1 V, VIN = 0 dBm, Test Circuit6 www.broadchip.com May, 2008, REV0.1 Charge Injection Select Input to Common I/O Channel ON Capacitance VNO1 or VNC1 = VNO2 or VNC2 =0 V, CL=1.0nF Test Circuit7 Q CON +25°C 3.0 pC +25°C 106 pF Low-Voltage, 0.4Ω Dual-SPDT Analog Switch Figure 1. Logic equivalent circuit Figure 2. tBBM (Time Break-Before-Make) Figure 3. tON/OFF www.broadchip.com May, 2008, REV0.1 Low-Voltage, 0.4Ω Dual-SPDT Analog Switch Figure 4. tON/OFF Figure 5. Bandwidth -3dB Figure 6. Charge Injecting (Q) www.broadchip.com May, 2008, REV0.1 Low-Voltage, 0.4Ω Dual-SPDT Analog Switch Package Information 1.800 ±0.050 0.400 TYP 1.400 ± 0.050 0.400 ±0.100 (×9) PIN #1 IDENTIFICATION CHAMFER 0.350×45° 0.800 REF 0.500±0.100 PIN #1 DOT BY MARKING BOTTEM VIEW 0.550±0.050 TOP VIEW 0.200±0.050 0.000-0.050 0.203 REF SIDE VIEW Note: All linear dimensions are in millimeters. www.broadchip.com
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