BG200B12UY3-I

BG200B12UY3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V General Description Features BYD IGBT Power Module BG200B12UY3-I provides fast switching characteristic as well as high short circuit capability, which introduce the advanced IGBT chip/FWD and improved connection.       IC=200A High speed IGBT technology Including ultra fast & soft recovery anti-parallel FWD Low inductance Standard package High short circuit capability Fast switching and short tail current Applications       High frequency drivers AC motor control Inverters Servo UPS (Uninterruptible Power Supplies) Electric welding Characteristic Values Parameter Symbol Conditions Temperature Value Unit Absolute Maximum Ratings Collector-emitter voltage Continuous collector current VCES IC VGE=0V Tj=25℃ 1200 V — TC=80℃ 200 A Peak collector current ICRM ICRM =2IC,tp=1ms — 400 A Gate-emitter voltage VGES — — +/-20 V Total power dissipation Ptot per switch (IGBT) TC=25℃ 1041 W IGBT short circuit SOA tpsc Tvj≤125℃ 10 us VCC=600V, VGE≤15V VCES≤1200V Max. junction temperature Tvj max — — 150 ℃ Operation junction temperature Tvj op — — -40~125 ℃ Storage temperature range Tstg — — -40~125 ℃ Diode DC forward current IF — TC=80℃ 200 A IFRM IFRM=2IF,tp=1ms — 400 A I2t-value, Diode I2 t VR=0V,t=10ms Tj=125℃ — A2s Isolation voltage Visol t=1min,f=50Hz — AC 2500 V Peak forward current Datasheet WI-D06-J-0279 Rev.A/1 Page 1 of 9 BYD Microelectronics Co., Ltd. Parameter Symbol BG200B12UY3-I Conditions Temperature Value Unit Characteristics IGBT Gate-emitter threshold voltage VGE(th) Collector-emitter cut-off current ICES VCE=1200V,VGE=0V Gate-emitter cut-off current IGES VCE=0V,VGE=± 20V VCE(sat) IC=200A,VGE=15V Collector-emitter saturation voltage Integrated gate resistor Total Gate Charge RGint — Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time VGE=VCE, IC= 3mA tr VCE=600V,IC=200A, VGE=0V…+15V VCE=25V,VGE =0V, f=1MHz VCC=600V,IC=200A, RGon=RGoff=3.3Ω, VGE=± 15V, Turn-off delay time Fall time td(off) Lσ=80nH, Inductive load tf VCC=600V, IC=200A, Energy dissipation during turn-on time Eon RGon =3.3Ω, VGE=± 15V, Lσ=80nH, Inductive load VCC=600V,IC=200A, Energy dissipation during turn-off time Eoff RGoff =3.3Ω,VGE=± 15V Lσ=80nH, Inductive load Datasheet WI-D06-J-0279 Rev.A/1 min. typ. max. Tvj=25℃ 5.0 5.8 6.5 V Tvj=25℃ — — 1 mA Tvj=125℃ — — 10 mA Tvj=25℃ -400 — 400 nA Tvj=25℃ — 2.8 — V Tvj=125℃ — 3.5 — V Tvj=25℃ — 1.5 — Ω — — 1.28 — uC — — 0.22 — uC — — 0.80 — uC — 12.8 — nF — 7.5 — nF — 9.3 — nF Tvj=25℃ — 224 — ns Tvj=125℃ — 210 — ns Tvj=25℃ — 91 — ns Tvj=125℃ — 84 — ns Tvj=25℃ — 400 — ns Tvj=125℃ — 460 — ns Tvj=25℃ — 140 — ns Tvj=125℃ — 200 — ns Tvj=25℃ — 13.9 — mJ Tvj=125℃ — 17.8 — mJ Tvj=25℃ — 10.9 — mJ Tvj=125℃ — 15.8 — mJ Tvj=25℃ Page 2 of 9 BYD Microelectronics Co., Ltd. Parameter Symbol BG200B12UY3-I Conditions Temperature Diode Unit min. typ. max. Tvj=25℃ — 1.8 — V Tvj=125℃ — 1.8 — V Tvj=125℃ — 160 — A Forward voltage VF Peak reverse recovery current IRR Recovered charge Qrr IF=200A,VR=600V, Tvj=125℃ — 28.4 — uC Reverse recovery time trr diF/dt=1100/us Tvj=125℃ — 370 — ns Tvj=125℃ — 10.5 — mJ Reverse recovery energy IF=200A Value Erec Thermal-Mechanical Specifications IGBT thermal resistance junction to case Diode thermal resistance junction to case Thermal resistance case to heat-sink Dimensions Clearance distance in air Rth(j-c) per IGBT — — 0.12 K/W Rth(j-c) per diode — — 0.2 K/W Rth(c-s) per module — 0.03 — K/W Typical , see outline drawing 106.4 x 61.4 x 31.5 mm according to IEC Term. to base: — — 28.3 Term. to term: 6.0 — — Term. to base: — 24 — Term. to term: — 14 — — — 320 — LxWxH da 60664-1 and EN 50124-1 according to IEC Surface creepage distance ds 60664-1 and EN 50124-1 Mass m — mm mm g Thermal and mechanical properties according to IEC 60747–15 Specification according to the valid application note. Datasheet WI-D06-J-0279 Rev.A/1 Page 3 of 9 BYD Microelectronics Co., Ltd. BG200B12UY3-I Characterization Curves Fig.1 Typ. On-state Characteristics Fig.3 Typ. Output Characteristics Datasheet Fig.2 Typ. Transfer Characteristics Fig.4 Switching Loss vs. Collector Current WI-D06-J-0279 Rev.A/1 Page 4 of 9 BYD Microelectronics Co., Ltd. BG200B12UY3-I 30 Vcc=600V Ic=200A VGE =15V Tvj=125℃ 24 Eon E[mJ] 18 Eoff 12 Erec 6 0 0 6 Fig.5 Typ. Reverse Recovery Characteristics vs di/dt 12 Rg[Ω] 18 24 Fig.6 Switching Loss vs. Gate Resistor 1000 Vcc=600V Ic=200A VGE =15V Tvj=125℃ 900 800 700 tdoff t[ns] 600 500 tdon 400 300 tf 200 tr 100 0 0 6 12 18 24 Rg[Ω] Fig.7 Typ. Switching Times vs. IC Datasheet Fig.8 Typ. Switching Times vs. Gate Resistor RG WI-D06-J-0279 Rev.A/1 Page 5 of 9 BYD Microelectronics Co., Ltd. BG200B12UY3-I Fig.9 FWD Forward Characteristics. Fig.10 Typ. Switching Losses Diode-Inverter 300 Tj=150℃ VGE=15V 250 200 IC[A] 150 100 50 0 0 Fig.11 Typ. FRD Recovery Charge Datasheet 30 60 90 TC[℃] 120 150 180 Fig. 12 Rate Current vs. Temperature (TC) WI-D06-J-0279 Rev.A/1 Page 6 of 9 BYD Microelectronics Co., Ltd. BG200B12UY3-I 250 Ic,Module Ic,Chip 200 Ic[A] 150 100 50 0 0 300 600 900 VCE[A] 1200 1500 Fig.13 Reverse Bias Safe Operating Area IGBT-inv(RBSOA) Datasheet WI-D06-J-0279 Rev.A/1 Page 7 of 9 BYD Microelectronics Co., Ltd. BG200B12UY3-I Circuit Diagram Package Outlines Dimensions in mm Attached (recommended torque): MS : (to heat sink M6) 3~6 Nm M t : (to terminals M6) 2.5~5 Nm Datasheet WI-D06-J-0279 Rev.A/1 Page 8 of 9 BYD Microelectronics Co., Ltd. BG200B12UY3-I Attention 1. In order to reduce the contact resistance, we suggest add thermal grease between base and heat-sink, which thickness is about 0.1mm. 2. When installing the module, please wear a electrostatic bracelet to prevent the gate breakdown and the imbalance power may damage the internal chip, even to damage the module. 3. This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. RESTRICTIONS ON PRODUCT USE  The information contained herein is subject to change without notice.  BYD Microelectronics Co., Ltd. (short for BME) exerts the greatest possible effort to ensure high quality and reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing BME products, to comply with the standards of safety in making a safe design for the entire system, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. In developing your designs, please ensure that BME products are used within specified operating ranges as set forth in the most recent BME products specifications.  The BME products listed in this document are intended for usage in general electronics applications (personal equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These BME products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of BME products listed in this document shall be made at the customer’s own risk. Datasheet WI-D06-J-0279 Rev.A/1 Page 9 of 9