BG75B12UX3-I

BG75B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V General Description Features BYD IGBT Power Module BG75B12UX3-I provides fast switching characteristic as well as high short circuit capability, which introduce the advanced IGBT chip/FWD and improved connection.       IC=75A High speed IGBT technology Including ultra fast & soft recovery anti-parallel FWD Low inductance Standard package High short circuit capability Fast switching and short tail current Applications       High frequency drivers AC motor control Inverters Servo UPS (Uninterruptible Power Supplies) Electric welding Characteristic values Parameter Symbol Conditions Temperature Value Unit Absolute Maximum Ratings Collector-emitter voltage Continuous collector current VCES IC VGE=0V Tj=25℃ 1200 V — Tc=80℃ 75 A Peak collector current ICRM ICRM =2IC — 150 A Gate-emitter voltage VGES — — +/-20 V Total power dissipation Ptot per switch (IGBT) Tc = 25℃ — W IGBT short circuit SOA tpsc Tvj≤125℃ 10 us VCC=600V, VGE≤15V VCEM≤1200V Max. junction temperature Tvj max — — 150 ℃ Operation junction temperature Tvj op — — -40~150 ℃ Storage temperature range Tstg — — -40~125 ℃ Diode DC forward current IF — Tc=80℃ 75 A IFRM=2IF — 150 A — A2s 2500 V Peak forward current IFRM I2t-value, Diode I2 t VR=0V,t=10ms Tj=125℃ Isolation voltage Visol t=1min,f=50Hz — Datasheet WI-D06-J-0064 Rev.A/1 Page 1 of 9 BYD Microelectronics Co., Ltd. Parameter Symbol BG75B12UX3-I Conditions Temperature Value Unit Characteristics IGBT Gate-emitter threshold voltage VGE(th) Collector-emitter cut-off current ICES VCE=1200V,VGE=0V Gate-emitter cut-off current IGES VCE=0V,VGE=±20V Collector-emitter saturation voltage Integrated gate resistor Total Gate Charge VCE(sat) RGint Ic=75A,VGE=15V — Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time VGE=VCE, IC= 3mA tr VCE=600V,IC=75A, VGE=±15V VCE=25V,VGE =0V, f=1MHz VCC=600V,Ic=75A, RGon=RGoff=3.3Ω, VGE=± 15V, Turn-off delay time Fall time td(off) Lσ=80nH, Inductive load tf VCC=600V, Ic=75A, Energy dissipation during turn-on time Eon RGon =3.3Ω, VGE=± 15V, Lσ=80nH, Inductive load VCC=600V,Ic=75A, Energy dissipation during turn-off time Eoff RGoff=3.3Ω,VGE=± 15V Lσ=80nH, Inductive load Datasheet WI-D06-J-0064 Rev.A/1 min. typ. max. Tvj=25℃ 5.0 5.5 6.5 V Tvj=25℃ — — 1.0 mA Tvj=125℃ — — 1.0 mA Tvj=25℃ -400 — 400 nA Tvj=25℃ — 2.84 — V Tvj=125℃ — 3.7 — V Tvj=25℃ — — — Ω — — tbd — uC — — tbd — uC — — tbd — uC — tbd — nF — tbd — nF — tbd — nF Tvj=25℃ — 323 — ns Tvj=125℃ — 345 — ns Tvj=25℃ — 63 — ns Tvj=125℃ — 68 — ns Tvj=25℃ — 283 — ns Tvj=125℃ — 300 — ns Tvj=25℃ — 132 — ns Tvj=125℃ — 155 — ns Tvj=25℃ — 5.06 — mJ Tvj=125℃ — 9.8 — mJ Tvj=25℃ — 2.87 — mJ Tvj=125℃ — 4.81 — mJ Tvj=25℃ Page 2 of 9 BYD Microelectronics Co., Ltd. Parameter Symbol BG75B12UX3-I Conditions min. typ. Max. min. typ. max. Tvj=25℃ — 2.0 — V Tvj=125℃ — 1.7 — V Tvj=125℃ — 48 — A Diode Forward voltage VF Peak reverse recovery current IRR Recovered charge Qrr IF=75A,VR=600V, Tvj=125℃ — 12.2 — uC Reverse recovery time trr diF/dt=-550A/us Tvj=125℃ — 380 — ns Tvj=125℃ — 5.05 — mJ Reverse recovery energy IF=75A Unit Erec Thermal-Mechanical Specifications IGBT thermal resistance junction to case Diode thermal resistance junction to case Thermal resistance case to heat-sink Dimensions Rth(j-c) per IGBT — tbd — K/W Rth(j-c) per diode — tbd — K/W Rth(c-s) per module — 0.03 — K/W LxWxH Typical , see outline drawing according to IEC Clearance distance in air da 60664-1 and EN 50124-1 according to IEC Surface creepage distance ds 60664-1 and EN 50124-1 Mass m — 94× 34× 30.5 mm Term. to base: — — 17 Term. to term: — — 9.5 Term. to base: — — 17 Term. to term: — — 20 — — 160 — mm mm Thermal and mechanical properties according to IEC 60747 – 15 Specification according to the valid application note. Datasheet WI-D06-J-0064 Rev.A/1 Page 3 of 9 g BYD Microelectronics Co., Ltd. BG75B12UX3-I Characterization curves 200 140 V GE=15V VCE=20V 180 tp=10us 160 120 140 Tvj=25℃ 100 IC[A] IC[A] 120 80 100 Tvj=125℃ 60 80 Tvj=125℃ 60 Tvj=25℃ 40 40 20 20 0 0 0 1 2 3 VCE [V] 4 4.5 5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 VGE[V] Fig.1 Typ. On-state Characteristics Fig.2 Typ. Transfer Characteristics 30 150 Tvj=125℃ VGE=17V Vcc=600V VGE=15V Rg=3.3Ω L=80nH VGE=13V 120 Tvj=25℃ Tvj=125℃ VGE=15V 20 Eon E[mJ] IC[A] VGE=11V 90 VGE=9V 60 Eoff 10 30 0 0 0 1 2 3 4 5 6 7 8 0 30 VCE[V] 90 120 I C[A] Fig.3 Typ. Output Characteristics Datasheet 60 Fig.4 Switching Loss vs. Collector Current WI-D06-J-0064 Rev.A/1 Page 4 of 9 150 BYD Microelectronics Co., Ltd. BG75B12UX3-I 16 90 Vcc=600V Ic=75A VGE =15V Tvj=125℃ 80 3.3 5.1 70 Eon 12 10 60 Irr 50 E[mJ] IRR[A]Erec[mJ]Qrr[uC] Vcc=600V Ic=75A VGE=15V Tvj=125℃ RG=15 8 40 Eoff 30 Erec 20 4 Qrr Erec 10 0 0 400 500 600 700 800 900 1000 0 5 Rg[Ω] 10 15 di/dt[A/us] Fig.5 Typ. Reverse Recovery Characteristics vs di/dt Fig.6 Switching Loss vs. Gate Resistor 700 600 Vcc=600V,VGE=15V Rg=3.3Ω,Tvj=125℃ Vcc=600V Ic=75A VGE=15V Tvj=125℃ 600 500 500 400 tdon tdon tdoff t[ns] t[ns] 400 300 tdoff 300 200 200 tf 100 tf tr 100 tr 0 0 0 40 80 120 160 0 IC[A] Fig.7 Typ. Switching Times vs. IC Datasheet 2.5 5 7.5 10 Rg[Ω] 12.5 15 Fig.8 Typ. Switching Times vs. Gate resistor RG WI-D06-J-0064 Rev.A/1 Page 5 of 9 17.5 BYD Microelectronics Co., Ltd. BG75B12UX3-I 10 150 Vcc=600V VGE=15V Rg=3.3Ω 8 Erec[mJ] 120 I F[A] 90 6 Tvj=125℃ Tvj=125℃ 4 60 Tvj=25℃ 30 2 Tvj=25℃ 0 0 0 0.5 1 1.5 VF[V] 2 2.5 3 0 Fig.9 FWD Forward Characteristics. 40 60 80 100 IF[A] 120 140 Fig.10 Typ. Switching Losses Diode-Inverter 100 20 Vcc=600V VCE=15V Tvj=125℃ 18 5.1 10 16 Tj=125℃ VGE=15V 3.3 150A RG=15 14 100A 10 IC[A] 75A 12 Qrr[uC] 20 50A 50 8 6 If=20A 4 2 0 0 0 100 200 300 400 500 di/dt[A/us] 600 700 0 40 80 120 TC[℃] Fig.11 Typ. FRD Recovery charger Datasheet 800 Fig. 12 Rate Current vs. Temperature（TC） WI-D06-J-0064 Rev.A/1 Page 6 of 9 160 160 BYD Microelectronics Co., Ltd. BG75B12UX3-I 175 Ic,Module Ic,Chip 150 125 Ic[A] 100 75 50 25 0 0 200 400 600 VCE[A] 800 1000 1200 Fig.13 Reverse Bias Safe Operating Area IGBT-inv(RBSOA) Datasheet WI-D06-J-0064 Rev.A/1 Page 7 of 9 BYD Microelectronics Co., Ltd. BG75B12UX3-I Circuit Diagram Package Outlines Dimensions in mm Attached (recommended torque): MS : (to heat sink M6) 3~5 Nm Datasheet M t : (to terminals M5) 2.5~4 Nm WI-D06-J-0064 Rev.A/1 Page 8 of 9 BYD Microelectronics Co., Ltd. BG75B12UX3-I Attention 1. In order to reduce the contact resistance, we suggest add thermal grease between base and heat-sink, which thickness is about 0.1mm. 2. When installing the module, please wear a electrostatic bracelet to prevent the gate breakdown and the imbalance power may damage the internal chip, even to damage the module. 3. This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. RESTRICTIONS ON PRODUCT USE  The information contained herein is subject to change without notice.  BYD Microelectronics Co., Ltd. (short for BME) exerts the greatest possible effort to ensure high quality and reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing BME products, to comply with the standards of safety in making a safe design for the entire system, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. In developing your designs, please ensure that BME products are used within specified operating ranges as set forth in the most recent BME products specifications.  The BME products listed in this document are intended for usage in general electronics applications (personal equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These BME products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of BME products listed in this document shall be made at the customer’s own risk. Datasheet WI-D06-J-0064 Rev.A/1 Page 9 of 9