BM3416E

BM3416E MOSFET N-Channel Enhancement-Mode MOSFET SOT-23 - ROHS Features • Low RDS(on) @VGS=4.5V • 3.3V Logic Level Control • N Channel SOT23 Package • HMB ESD Protection 2KV • Pb−Free, RoHS Compliant Applications • DC-to-DC converters V(BR)DSS RDS(ON) Typ ID Max • Low-side load switch and charging switch for portable devices 16.2mΩ @ 4.5V 20V • Power management in battery-driven portables 6.5A • Switching circuits 17.3mΩ @ 3.3V • High-speed line driver Order Information Product Marking Package BM3416E A6EF3 SOT23 Packing Min Unit Quantity 3000PCS/Reel 3000PCS Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±8 V V(BR)DSS Drain-Source Breakdown Voltage 20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -50 to 150 °C TA =25°C 26 A TA =25°C 6.5 TA =70°C 4.8 TA =25°C 1.56 TA =70°C 1 Mounted on Large Heat Sink IDM Pulse Drain Current Tested① ID Continuous Drain Current PD R JA Rev 8: Nov 2018 A Maximum Power Dissipation W Thermal Resistance Junction-Ambient www.born-tw.com 80 °C/W Page 1 of 4 BM3416E MOSFET Symbol N-Channel Enhancement-Mode MOSFET Parameter Condition ROHS Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=250μA 20 -- -- V Zero Gate Voltage Drain Current(TA=25℃) VDS=20V, VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(TA=125℃) VDS=16V, VGS=0V -- -- 100 uA IGSS Gate-Body Leakage Current VGS=±8V, VDS=0V -- -- ±10 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 0.4 0.7 1.0 V RDS(ON) Drain-Source On-State Resistance② VGS=4.5V, ID=5A -- 16.2 20 mΩ RDS(ON) Drain-Source On-State Resistance② VGS=3.3V, ID=3A -- 17.3 22 mΩ RDS(ON) Drain-Source On-State Resistance② VGS=2.5V, ID=2A -- 20 25 mΩ -- 450 -- pF -- 108 -- pF -- 80 -- pF -- 8.3 -- nC -- 1.4 -- nC -- 4.7 -- nC -- 285 -- ns -- 345 -- ns - 5.8 -- ns -- 4.2 -- ns -- -- 2 A -- 0.78 1.2 V V(BR)DSS IDSS Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VDS=10V, VGS=0V, f=1MHz VDS=10V ID=5A, VGS=4.5V Switching Characteristics @ TJ = 25°C (unless otherwise stated) t d(on) Turn on Delay Time tr Turn on Rise Time t d(off) Turn Off Delay Time tf Turn Off Fall Time VDD=10V, ID=1A, RG=3.3Ω, VGS=4.5V Source Drain Diode Characteristics @ TJ = 25°C (unless otherwise stated) ISD Source drain current(Body Diode) VSD Forward on voltage② TA=25℃ Tj=25℃, ISD=5A, VGS=0V Notes: ① Pulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width300s, duty cycle2%. Rev 8: Nov 2018 www.born-tw.com Page 2 of 4 BM3416E MOSFET N-Channel Enhancement-Mode MOSFET ROHS ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig1. Typical Output Characteristics Fig2. VGS(TH) Voltage Vs. Temperature Rdson, On -Resistance (mΩ)) ID, Drain-Source Current (A) Tc, Case Temperature (°C) VGS, Gate -Source Voltage (V) ID , Drain Current (A) Fig3. Typical Transfer Characteristics Fig4. On-Resistance vs. Drain Current and Gate -ID - Drain Current (A) ISD, Reverse Drain Current (A) Voltage VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Rev 8: Nov 2018 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.born-tw.com Page 3 of 4 BM3416E MOSFET N-Channel Enhancement-Mode MOSFET ROHS VGS, Gate-Source Voltage (V) Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance VDS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage ZqJA Normalized Transient C, Capacitance (pF) Typical Characteristics Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance SOT -23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT)：mm Rev 8: Nov 2018 www.born-tw.com Page 4 of 4