BSD3C081V

BSD3C081V ESD Protection Diode »Features ■ 400Watts peak pulse power (tp = 8/20μs) ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ IEC 61000-4-2 ±30kV contact ±30kV air ■ IEC 61000-4-4 (EFT) 40A (5/50ns) ■ IEC 61000-4-5 (Lightning) 15A(8/20μs) »Applications »Mechanical Data ■ Microprocessor based equipment ■ SOD323 package ■ Personal Digital Assistants (PDA’s) ■ Molding compound flammability rating: UL 94V-0 ■ Notebooks, Desktops, and Servers ■ Packaging: Tape and Reel ■ Portable Instrumentation ■ RoHS/WEEE Compliant ■ Pagers Peripherals »Schematic & PIN Configuration SOD-323 Revision 2018 www.born-tw.com 1/4 BSD3C081V »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs) PPP 400 Watts Peak Pulse Current ( tp =8/20μs ) (note1) Ipp 15 A VESD 30 30 kV Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 150 ℃ Storage Temperature Tstg -55 to + 150 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Conditions Min Typical VRWM Max Units 8.0 V VBR IT=1mA Reverse Leakage Current IR VRWM=8.0V,T=25℃ 1 uA Clamping Voltage VC IPP15A,tp=8/20μs 27 V Junction Capacitance Cj VR = 0V, f = 1MHz Reverse Breakdown Voltage 9.0 V 45 pF »Electrical Parameters (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/4 BSD3C081V »Typical Characteristics Figure 2: Power Derating Curve 10k 110 Percent of Rated Power for Ipp P pp – Peak Pulse Power - Ppp(W) Figure 1: Peak Pulse Power vs. Pulse Time 400w 8/20μs waveform 1000 100 10 0.1 1 10 100 100 90 80 70 60 50 40 30 20 10 0 1,000 0 25 td – Pulse Duration - µs Figure3: Pulse Waveform 90 Percent Ipp 80 e-1 50 40 td=Ipp/2 20 125 150 Test Waveform Paramters tr=8µs td=20µs 40 Clamping Voltage–VC (V) 100 30 100 45 Waveform Paramters tr=8µs td=20µs 60 75 Figure 4: Clamping Voltage vs.Ipp 110 70 50 Ambient Temperature - TA (℃) 35 30 25 20 15 10 5 10 0 0 5 Revision 2018 10 15 Time (µs) 20 25 30 0 5 10 15 20 25 Peak Pulse Current–IPP (A) www.born-tw.com 3/4 BSD3C081V »Outline Drawing – SOD323 C A DIMENSIONS SYMBOL E B 1 2 MILLIMETER A MIN 1.600 MAX 1.800 MIN 0.063 MAX 0.071 B 0.250 0.350 0.010 0.014 C 2.500 2.700 0.098 0.106 D D H L 0.039 1.000 E 1.200 1.400 0.047 0.055 F 0.080 0.150 0.003 0.006 L F INCHES 0.475 REF 0.019REF L1 0.250 0.400 0.010 0.016 H 0.000 0.100 0.000 0.004 L1 »Marking 1 08B 2 »Ordering information Order code Package Base qty Delivery mode BSD3C081V SOD323 3000 Tape and reel Revision 2018 www.born-tw.com 4/4