BDFN2C241V35

BDFN2C241V35 ESD Protection Diode »Features ■ 280Watts peak pulse power (tp = 8/20μs) ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Protection one data/power line ■ IEC 61000-4-2 ±8kV contact ±15kV air ■ IEC 61000-4-4 (EFT) 40A (5/50ns) ■ IEC 61000-4-5 (Lightning) 5A (8/20μs) »Applications »Mechanical Data ■ Microprocessor based equipment ■ DFN1006 package ■ Personal Digital Assistants (PDA’s) ■ Molding compound flammability rating: UL 94V-0 ■ Notebooks, Desktops, and Servers ■ Packaging: Tape and Reel ■ Portable Instrumentation ■ RoHS/WEEE Compliant »Schematic & PIN Configuration DFN1006 Revision 2018 www.born-tw.com 1/4 BDFN2C241V35 »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 280 Watts Peak Pulse Current ( tp =8/20μs )(note1) Ipp 5 A VESD 15 8 kV Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Conditions Min Typical VRWM VBR IT=1mA Reverse Leakage Current IR VRWM=24V,T=25℃ Peak Pulse Current IPP tp =8/20μs Clamping Voltage VC IPP=5A,tp=8/20μs 44 Junction Capacitance Cj VR = 0V, f = 1MHz 20 Reverse Breakdown Voltage Max Units 24 V 26.7 V 0.1 0.5 μA 5 A V 25 pF »Electrical Parameters (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ V RWM Breakdown Voltage @ IT VC V BR VRWM IT IR IR IT V RWM VC V BR V Test Current IPP Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/4 BDFN2C241V35 »Typical Characteristic Fig.1 Peak Pulse Power RatingCurve Fig.2 Pulse Derating Curve 110 100 Peak Pulse Power –PPP(KW) 10 % of Rated Power (PPP) or IPP 240w 8/20µs waveform 1 0.1 0.01 0.1 1 10 100 Pulse Duration tp (μs) 1000 Fig.3 PulseWaveform-8/20μs 120 40 20 0 0 25 50 75 100 125 Ambient Temperature—TA(℃) 100%IPP , 8μS 150 100% 90% 30ns 80 50%IPP, 20μS e-t 60 Percent of IPP Percent of IPP 60 Fig.4 PulseWaveform-ESD(IEC61000-4-2) 100 40 20 0 80 60ns 10% 0 5 10 15 20 25 30 0 30 60 Fig.5 IEC61000-4-2 +8kV ContactDischarge Fig.6 IEC61000-4-2 -8kV ContactDischarge Trigger and Clamping Voltage(V) Time (ns) Trigger and Clamping Voltage(V) Time (μs) tr 0.7 to 1ns Time (ns) Time (ns) Revision 2018 www.born-tw.com 3/4 BDFN2C241V35 »Outline Drawing – DFN1006 »Marking CB »Ordering information Order code BDFN2C241V35 Revision 2018 Package DFN1006 Base qty 10k www.born-tw.com Delivery mode Tape and reel 4/4