BZT52C4V7

BZT52Cxx Zener Diode »Features  Low Zener Impedance  Power Dissipation of 500mW  High Stability and High Reliability »General Description  Case: molded plastic  Polarity: Color band denotes cathode  Package: SOD-123 Plastic Package  Epoxy UL: 94V-0 SOD-123 » Maximum Ratings @T =25℃ unless otherwise noted A Parameters Symbol Value Power Dissipation Pd 500 1) mW Forward Voltage @IF=10mA Vf 0.9 2) Storage temperature range Ts -65-+150 V ℃ 1) 2) 3) Unit Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm² Short duration test pulse used to minimize self-heating effect f=1KHz Revision 2018 www.born-tw.com 1/6 BZT52Cxx »Electrical Characteristics @T =25℃ unless otherwise noted A Zener Voltage Range Device Marking Vz@Izt Maximum Zener Impedance 1.5KExxA( CA) Zzt Zzk Izt @Izt @Izk Ω Maximum Reverse Current Izk IR VR Typical Temperature coefficent @ IZTC=mV/℃ Test Current IZTC Nom(V) Min(V) Max(V) mA mA uA V Min Max mA BZT52C2V4 WX 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43 WU 43 40.0 46.0 2 100 700 1.0 0.1 32.0 10.0 12.0 5 BZT52C47 WV 47 44.0 50.0 2 100 750 1.0 0.1 35.0 10.0 12.0 5 BZT52C51 WW 51 48.0 54.0 2 100 750 1.0 0.1 38.0 10.0 12.0 5 Revision 2018 www.born-tw.com 2/6 BZT52Cxx »Typical Performance Characteristics（(TJ = 25 °C, unless otherwise noted)） Breakdown characteristics at Tj=constant (pulsed) Forward characteristics Revision 2018 Admissible power dissipation versus ambient temperature www.born-tw.com 3/6 BZT52Cxx Pulse thermal resistance versus pulse duration Dynamic resistance versus Zener current Capacitance versus Zener voltage Dynamic resistance versus Zener current Dynamic resistance versus Zener current Thermal differential resistance versus Zener voltage Revision 2018 www.born-tw.com 4/6 BZT52Cxx Dynamic resistance versus Zener voltage Temperature dependence of Zener voltage versus Zener voltage Temperature dependence of Zener voltage versus Zener voltage Change of Zener voltage versus junctiontemperature Change of Zener voltage versus junctiontemperature Change of Zener voltge from turn-on up to the point ofthermal equilibrium versus Zener voltage Revision 2018 www.born-tw.com 5/6 BZT52Cxx »Package Information SOD-123 Revision 2018 www.born-tw.com 6/6