BDFN2C051U
ESD Protection Diode
»Features
■
60Watts peak pulse power (tp = 8/20μs)
■
Tiny DFN1006 package
■
Bidirectional configurations
■
Solid-state silicon-avalanche technology
■
Low clamping voltage
■
Low leakage current
■
Low capacitance (Cj=0.5pF typ. IO to IO)
■
Protection one data/power line
■
IEC 61000-4-2 ±15kV contact ±15kV air
■
IEC 61000-4-4 (EFT) 40A (5/50ns)
■
IEC 61000-4-5 (Lightning) 3.5A (8/20μs)
»Applications
»Mechanical Data
■
Cell Phone Handsets and Accessories
■
DFN1006 package
■
Microprocessor based equipment
■
Molding compound flammability rating: UL 94V-0
■
Personal Digital Assistants (PDA’s)
■
Packaging: Tape and Reel
■
Notebooks, Desktops, and Servers
■
RoHS/WEEE Compliant
■
Portable Instrumentation
»Schematic & PIN Configuration
DFN1006
Revision 2018
www.born-tw.com
1/4
BDFN2C051U
»Absolute Maximum Rating
Rating
Symbol
Value
Units
Peak Pulse Power ( tp =8/20μs )
PPP
60
Watts
Peak Pulse Current ( tp =8/20μs )(note1)
Ipp
3.5
A
VESD
±15
±15
kV
Lead Soldering Temperature
TL
260(10seconds)
℃
Junction Temperature
TJ
-55 to + 125
℃
Storage Temperature
Tstg
-55 to + 125
℃
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
»Electrical Characteristics
Parameter
Symbol
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Conditions
Min
Typical
VRWM
VBR
IT=1mA
Reverse Leakage Current
IR
VRWM=5V,T=25℃
Peak Pulse Current
IPP
tp =8/20μs
Clamping Voltage
VC
IPP=3.5A,tp=8/20μs
Junction Capacitance
Cj
IO to IO
VR = 0V, f = 1MHz
6.0
Max
Units
5.0
V
8.0
V
0.1
0.5
μA
3.5
A
16
20
V
0.5
0.9
pF
»Electrical Parameters (TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
I
IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
VC V BR
V RWM
IT
IR
ITIR
VRWM
V BR V C
V
Breakdown Voltage @ IT
Test Current
IPP
Note:. 8/20μs pulsewaveform.
Revision 2018
www.born-tw.com
2/4
BDFN2C051U
»Typical
Characteristics
Figure 2: Power Derating Curve
110
10
Percent of Rated Power for Ipp
P pp – Peak Pulse Power - Ppp(KW)
Figure 1: Peak Pulse Power vs. Pulse Time
1
60w 8/20µswaveform
0.1
0.01
1
0.1
10
100
100
90
80
70
60
50
40
30
20
10
0
1,000
0
25
td – Pulse Duration - µs
Figure3: Pulse Waveform
Percent
Ipp
80
e-1
50
40
td=Ipp/2
20
150
16
14
12
Test
Waveform
Paramters
tr=8µs
td=20µs
10
8
6
4
10
0
2
0
IPP
(A)
125
18
Clamping Voltage–VC (V)
90
30
100
20
Waveform
Paramters
tr=8µs
td=20µs
100
60
75
Figure 4: Clamping Voltage vs.Ipp
110
70
50
Ambient Temperature - TA (℃)
5
10
15
Time (µs)
20
25
30
0
1
2
3
4
5
6
Peak Pulse Current–IPP (A)
Figure5: Positive Clamping voltage (TLP)
Figure5: Negative Clamping voltage (TLP)
35
0
30
5
25
10
20
IPP
(A)
Rdyn = 0.55 Ω
20
15
Rdyn = 0.55 Ω
10
25
30
5
0
-0.5
15
35
4.5
9.5
14.5
19.5
24.5
-24.5
VCL (V)
Revision 2018
www.born-tw.com
-19.5
-14.5
-9.5
-4.5
0.5
VCL (V)
3/4
BDFN2C051U
»Outline Drawing – DFN1006
»Marking
5T
»Ordering information
Order code
BDFN2C051U
Revision 2018
Package
DFN1006
Base qty
10k
www.born-tw.com
Delivery mode
Tape and reel
4/4
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