BDFN2C181R

BDFN2C181R ESD Protection Diode »Features ■ 90Watts peak pulse power (tp = 8/20μs) ■ Tiny DFN1006 package ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=0.2pF typ.) ■ Protection one data/power line to: ■ IEC 61000-4-2 ±22kV contact ±22kV air ■ IEC 61000-4-4 (EFT) 40A (5/50ns) ■ IEC 61000-4-5 (Lightning) 3A (8/20μs) »Applications ■ Cell Phone Handsets and Accessories ■ Microprocessor based equipment ■ Personal Digital Assistants (PDA’s) ■ Notebooks, Desktops, and Servers ■ Portable Instrumentation »Mechanical Data ■ DFN1006 package ■ Molding compound flammability rating: UL 94V-0 ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant »Schematic & PIN Configuration DFN1006 Revision 2018 www.born-tw.com 1/4 BDFN2C181R »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 90 Watts Peak Pulse Current ( tp =8/20μs ) (note1) Ipp 3 A VESD 22 22 kV Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Conditions Min Typical VRWM VBR IT=1mA 23 Reverse Leakage Current IR VRWM=18V,T=25℃ 0.1 Peak Pulse Current IPP tp =8/20μs Clamping Voltage VC IPP=3A,tp=8/20μs Junction Capacitance Cj VR = 0V, f = 1MHz Reverse Breakdown Voltage Max Units 18.0 V V 0.2 0.5 μA 3 A 30 V 0.25 pF »Electrical Parameters (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VC VBR VRWM IT IR I IT R VRWM VBR VC V Breakdown Voltage @ IT Test Current IPP Note:. 8/20μs pulse waveform. Revision 2018 www.born-tw.com 2/4 BDFN2C181R »Typical Characteristics Figure 2: Power Derating Curve 10 110 100 Percent of Rated Power for Ipp Ppp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 1 90w 8/20µswaveform 0.1 90 80 70 60 50 40 30 20 10 0.01 1 0.1 10 100 0 1,000 0 25 td – Pulse Duration - µs Figure3: Pulse Waveform 125 150 40 Clamping Voltage–VC (V) 90 80 Ipp 100 45 Waveform Paramters tr=8µs td=20µs 100 Percent 75 Figure 4: Clamping Voltage vs.Ipp 110 70 e-1 60 50 Ambient Temperature - TA (℃) 50 40 30 td=Ipp/2 20 35 30 25 20 Test Waveform Paramters tr=8µs td=20µs 15 10 5 10 0 0 0 5 10 15 20 25 30 0 Time (µs) Revision 2018 1 2 3 4 5 6 Peak Pulse Current–IPP (A) www.born-tw.com 3/4 BDFN2C181R »Outline Drawing – DFN1006 »Marking 16T »Ordering information Order code BDFN2C181R Revision 2018 Package DFN1006 Base qty 10k www.born-tw.com Delivery mode Tape and reel 4/4