AOD603A-VB

AOD603A www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.030 at VGS = 10 V 35 0.033 at VGS = 4.5 V 30 0.050 at VGS = - 10 V - 19 0.060 at VGS = - 4.5 V - 15 6 nC 8 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • CCFL Inverter TO-252 D-PAK D1/D2 Top View Drain Connected to Tab G1 G2 S1 S2 N -channel P-channel S1 G1 D1/D2 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 60 -60 VGS Gate-Source Voltage ±20 ±20 TC=25°C ID 35 -20 Continuous Drain Current a b I 140 -80 Pulsed Drain Current DM a TC=25°C IS 35 -20 Continuous Source Current (Diode Conduction) a T =25°C P 50 50 Power Dissipation C D TJ, Tstg TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range Units V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case c Symbol Maximum RθJA 50 RθJC 3 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. E-mail：China@VBsemi TEL:86-755-83251052 1 AOD603A www.VBsemi.tw Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance E-mail：China@VBsemi TEL:86-755-83251052 Symbol Test Conditions Static VDS = VGS, ID = 250 uA VGS(th) VDS = VGS, ID = -250 uA IGSS VDS = 0 V, VGS = ±20 V VDS = 60 V, VGS = 0 V IDSS VDS = -48 V, VGS = 0 V VDS = 5 V, VGS = 10 V ID(on) VDS = -5 V, VGS = -10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 16 A rDS(on) VGS = -10 V, ID = -10 A VGS = -4.5 V, ID = -8 A VDS = 15 V, ID = 20 A gfs VDS = -15 V, ID = -10 A IS = 17 A, VGS = 0 V VSD IS = -10 A, VGS = 0 V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Dynamic b N - Channel VDS = 30 V, VGS = 4.5 V, ID = 20 A N - Channel VDS = 30 V, RL = 1.5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz P - Channel VDS = -30 V, VGS = 4.5 V, ID = -10 A P - Channel VDS = -30 V, RL = 3 Ω, ID = -10 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz Min Typ 1 -1 45 -25 Max Unit 3 -3 ±100 1 -1 V V nA uA A A 30 33 50 60 15 11 0.89 -0.98 9 3 4 5 5 27 8 1500 84 79 10 5 4 5 4 30 11 1180 84 60 mΩ mΩ S S V V nC ns pF nC ns pF 2 AOD603A www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 18 14 12 10 8 6 4 4 3 2 TC = 125 °C 1 25 °C 3V 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 55 °C 0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 3.5 1500 0.060 1200 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 0.055 0.050 0.045 0.040 VGS = 4.5 V 0.035 VGS = 10 V 0.030 Ciss 900 600 300 Coss 0.025 0 2 4 6 8 10 12 14 16 18 0 20 10 20 30 40 50 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 60 2.0 VDS = 30 V ID = 4.3 A 1.8 8 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) Crss 0 0.020 6 4 VGS = 10 V ID = 4.3 A 1.6 1.4 1.2 1.0 2 0.8 0 0 3 6 9 12 15 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature E-mail：China@VBsemi TEL:86-755-83251052 150 3 AOD603A www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted R DS(on) - Drain-to-Source On-Resistance (mΩ) 20 TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 1 0.0 0.2 0.4 0.6 1.0 0.8 1.2 0.12 0.11 0.10 0.09 0.08 0.07 ID = 4.3 A 0.06 0.05 0.04 0 1.4 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 25 2.8 2.4 Power (W) VGS(th) (V) 20 ID = 250 µA 2.6 2.2 2.0 15 10 1.8 5 1.6 1.4 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 1 ms 1 10 ms 0.1 TA = 25 °C Single Pulse 0.01 100 ms 1s 10 s DC 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area E-mail：China@VBsemi TEL:86-755-83251052 4 AOD603A www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 6 3.5 5 Power Dissipation (W) ID - Drain Current (A) 3.0 4 3 2 2.5 2.0 1.5 1.0 1 0.5 0.0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Derating Current Derating* IC - Peak Avalanche Current (A) 100 10 TA = 1 0.000001 L . ID BV - VDD 0.00001 0.0001 0.001 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 5 AOD603A www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case E-mail：China@VBsemi TEL:86-755-83251052 6 AOD603A www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 25 VGS = 10 thru 5 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 4V 10 15 10 TC = 125 °C 5 5 3V 25 °C - 55 °C 0 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 50 60 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1500 0.11 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.10 0.09 0.08 0.07 VGS = 4.5 V VGS = 10 V 0.06 1200 Ciss 900 600 0.05 300 Coss 0.04 0.00 Crss 0 0 5 10 15 20 25 0 10 20 ID - Drain Current (A) 40 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.2 10 VDS = 30 V ID = 3.1 A 2.0 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 30 6 4 VGS = 10 V ID = 3.1 A 1.8 1.6 1.4 1.2 1.0 2 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 7 AOD603A www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.40 20 0.35 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C TJ = 25 °C 1 0.0 0.30 0.25 ID = 3.1 A 0.20 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 8 10 On-Resistance vs. Gate-to-Source Voltage 0.6 50 0.4 40 ID = 250 µA Power (W) V GS(th) Variance (V) Source-Drain Diode Forward Voltage 0.2 0.0 - 0.2 - 0.4 - 50 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 30 20 10 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 IDM Limited Limited by R DS(on)* I D - Drain Current (A) 10 P(t) = 0.0001 1 P(t) = 0.001 ID(on) Limited 0.1 P(t) = 0.01 P(t) = 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited P(t) = 1 P(t) = 10 DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case E-mail：China@VBsemi TEL:86-755-83251052 8 AOD603A www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.5 ID - Drain Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.5 100 IC - Peak Avalanche Current (A) 4.0 Power Dissipation (W) 3.5 3.0 2.5 2.0 1.5 1.0 10 TA = L . ID BV - VDD 0.5 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 1 0.000001 0.00001 0.0001 0.001 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 9 AOD603A www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 10 AOD603A www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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