AP55T10GH-VB

AP55T10GH www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 0.0185 at VGS = 10 V ID (A)a 60 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested 38 nC APPLICATIONS • Primary Side Switch • Isolated DC/DC Converter TO-252 D G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 100 °C TA = 25 °C 45 ID 9.2b 6.8b TA = 100 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH Maximum Power Dissipation TA = 25 °C 60a IS 2b IAS 45 EAS 101 mJ 136.4 68.2 PD W 3b 1.5b TA = 100 °C TJ, Tstg Operating Junction and Storage Temperature Range A 140 TC = 25 °C TC = 100 °C V 60a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit °C - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol b Maximum Junction-to-Case Steady State Typical Maximum RthJA 40 50 RthJC 0.85 1.1 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. 1 AP55T10GH www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain-Source On-State Resistancea mV/°C - 12.5 2.5 5 V ± 100 nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 ID(on) VDS 5 V, VGS = 10 V RDS(on) VGS = 10 V, ID = 15 A gfs VDS = 15 V, ID = 15 A Forward Transconductancea V 110 50 µA A 0.0185 33  S Dynamicb Input Capacitance Ciss 2400 Output Capacitance Coss Reverse Transfer Capacitance Crss 80 Total Gate Charge Qg 38 Gate-Source Charge Qgs Gate-Drain Charge Qgd f = 1 MHz VDD = 50 V, RL = 1  ID  50 A, VGEN = 10 V, Rg = 1  tr td(off) Fall Time 230 pF 70 14 nC 12 td(on) Rise Time Turn-Off Delay Time VDS = 50 V, VGS = 10 V, ID = 50 A Rg Gate Resistance Turn-On Delay Time VDS = 50 V, VGS = 0 V, f = 1 MHz tf 1.6 2.5 12 20 10 20 18 35 8 15  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 50 100 IS = 15 A IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.85 1.5 V 80 120 ns 160 240 nC 57 23 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 AP55T10GH www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise note) 100 2.0 VGS = 10 V thru 8 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 80 VGS = 7 V 60 40 20 1.2 0.8 TC = 25 °C 0.4 VGS = 6 V TC = 125 °C TC = - 55 °C 0 0.0 0 1 2 3 4 5 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 0.036 75 45 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 60 TC = 25 °C TC = 125 °C 30 15 0.027 VGS = 10 V 0.018 0.009 0.000 0 0 10 20 30 0 50 40 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 100 3500 0.10 2800 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) ID = 15 A 0.08 0.06 0.04 TA = 150 °C Ciss 2100 1400 700 0.02 Coss TA = 25 °C 0 0.00 4 5 6 7 8 9 10 Crss 0 20 40 60 80 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Capacitance 100 3 AP55T10GH www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 2.5 ID = 15 A VDS = 50 V 15 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 20 A VDS = 80 V 10 5 0 0 20 40 80 60 1.0 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 175 0.7 TJ = 150 °C 0.2 VGS(th) Variance (V) 10 I S - Source Current (A) VGS = 10 V 1.5 0.5 - 50 100 100 TJ = 25 °C 1 0.1 0.01 0.001 0.0 2.0 - 0.3 ID = 5 mA - 0.8 - 1.3 - 1.8 0.2 0.4 0.6 0.8 1.0 - 2.3 - 50 1.2 ID = 250 µA - 25 0 VSD - Source-to-Drain Voltage (V) 25 50 75 100 125 150 175 TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 600 300 500 240 Power (W) Power (W) 400 180 120 200 TA = 25 °C 60 0 0.001 300 TC = 25 °C 100 0 0.01 0.1 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient 0 .001 0.01 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Case 4 AP55T10GH www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 1000 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s 100 s, DC TA = 25 °C Single Pulse 0.01 0.1 100 10 µs, 100 µs Limited by R DS(on)* I D - Drain Current (A) I D - Drain Current (A) 100 1.0 10 100 Limited by R DS(on)* 1 ms 10 ms 100 ms, DC 1 TC = 25 °C Single Pulse 0.01 0.1 1.0 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Safe Operating Area, Junction-to-Ambient 60 10 50 I D - Drain Current (A) 8 I D - Drain Current (A) 100 µs 10 0.1 1000 10 µs 6 4 2 Package Limited 40 30 20 10 0 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (°C) Current Derating**, Junction-to-Ambient 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current Derating**, Junction-to-Case ** The power dissipation PD is based on TJ(max.) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 AP55T10GH www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4.0 180 3.5 160 140 120 2.5 Power (W) Power (W) 3.0 2.0 1.5 100 80 60 1.0 40 0.5 20 0.0 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating**, Junction-to-Ambient 175 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Power Derating**, Junction-to-Case ** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 AP55T10GH www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 7 AP55T10GH www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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