AOT430-VB

AOT430 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () Max. ID (A) 0.0065at VGS = 10 V 80 0.0070at VGS = 6.0 V 75 0.0085at VGS = 4.5 V 65 a • TrenchFET® Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested 17.1 nC APPLICATIONS • Primary Side Switching TO-220AB • Synchronous Rectification D • DC/AC Inverters • LED Backlighting G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ± 20 Parameter TC = 70 °C 65 a ID TA = 25 °C 28.6b, c 24.9b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C 80 a IS TA = 25 °C 4.5b, c IAS L = 0.1 mH 30 EAS 45 mJ 180 TC = 70 °C 120 PD TA = 25 °C W 5b, c 3.2b, c TA = 70 °C Operating Junction and Storage Temperature Range A 350 TC = 25 °C Maximum Power Dissipation V 80 a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature) °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Symbol t  10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. E-mail：China@VBsemi TEL:86-755-83251052 1 AOT430 www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 μA 80 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 37 mV/°C - 6.1 2.0 3.5 V ± 100 nA VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 55 °C 10 VDS  5 V, VGS = 10 V 85 μA A VGS = 10 V, ID = 20 A 0.0065 VGS = 6 V, ID = 15 A 0.0070 VGS = 4.5 V, ID = 10 A 0.0085 VDS = 10 V, ID = 20 A 60 VDS = 40 V, VGS = 0 V, f = 1 MHz 1120  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 3855 pF 376 VDS = 40 V,VGS = 10 V, ID = 10 A 35.5 VDS = 40 V, VGS = 6 V, ID = 10 A 22 18 Gate-Source Charge Qgs VDS = 40 V,VGS = 4.5 V, ID = 10 A 7.3 Gate-Drain Charge Qgd Output Charge Qoss VDS = 40 V, VGS = 0 V Rg f = 1 MHz Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time td(on) tr td(off) nC 5.3 VDD = 40 V, RL = 4  ID  10 A, VGEN = 10 V, Rg = 1  57 0.5 86 1.3 2 12 24 8 16 32 64 tf 7 14 td(on) 14 28 tr td(off) VDD = 40 V, RL = 4  ID  10 A, VGEN = 6.0 V, Rg = 1  tf 11 22 30 60 8 16  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD 75 TC = 25 °C 150 IS = 5 A 0.76 1.1 A V Body Diode Reverse Recovery Time trr 38 75 ns Body Diode Reverse Recovery Charge Qrr 36 70 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 19 19 ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 2 AOT430 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 120 VGS = 10 V thru 7V 100 VGS = 6 V ID - Drain Current (A) ID - Drain Current (A) 80 60 40 20 80 TC = 25 °C 60 40 TC = 125 °C 20 VGS = 4 V VGS = 3 V 0 0.0 1.0 2.0 3.0 4.0 TC = - 55 °C 0 0.0 5.0 1.8 Output Characteristics 5.4 7.2 9.0 Transfer Characteristics 0.0150 5000 0.0130 4000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3.6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.0110 VGS = 4.5 V 0.0090 VGS = 6.0 V Coss 3000 Ciss 2000 1000 0.0070 Crss VGS = 10 V 0 0.0050 0 20 40 60 80 0 100 12 24 36 48 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 2.0 10 ID = 10 A 8 ID = 20 A 6 VDS = 20 V VDS = 60 V 4 VGS = 10 V 1.7 VDS = 40 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 60 1.4 VGS = 6V 1.1 0.8 2 0.5 0 0 8 16 24 32 Qg - Total Gate Charge (nC) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 40 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature 3 AOT430 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.050 TJ = 25 °C 1 0.1 0.01 0.030 0.020 TJ = 125 °C 0.010 0.001 TJ = 25 °C 0.000 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 Source-Drain Diode Forward Voltage 0.5 500 0.2 400 - 0.1 300 ID = 5 mA - 0.4 - 0.7 - 1.0 - 25 0 25 50 10 200 100 ID = 250 μA - 50 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Power (W) VGS(th) Variance (V) ID = 20 A 0.040 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient 1000 IDM Limited ID - Drain Current (A) 100 100 μs ID Limited 10 1 ms 1 10 ms Limited by RDS(on)* 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 1s 10 s DC BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 4 AOT430 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 75 ID - Drain Current (A) 60 Package Limited 45 30 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 75 2.5 60 2.0 Power (W) Power (W) Current Derating* 45 1.5 30 1.0 15 0.5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient      * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 5 AOT430 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 0.01 4. Surface Mounted 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case E-mail：China@VBsemi TEL:86-755-83251052 6 AOT430 www.VBsemi.tw TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 0.040 b 0.69 1.01 0.027 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) E-mail：China@VBsemi TEL:86-755-83251052 7 AOT430 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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