HAT2064R-VB

HAT2064R www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 ID (A)a RDS(on) (Ω) 0.004 at VGS = 10 V 18 0.005 at VGS = 4.5 V 16 Qg (Typ.) 6.8 nC • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 30 ± 20 18 16 ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V 15b, c 13b, c 50 3.8 A 2.1b, c 22 24 4.5 2.8 mJ 2.5b, c 1.6b, c - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 22 Maximum 50 28 Unit °C/W Notes: a. Base on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. 1 HAT2064R www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 28 mV/°C -6 1.0 3.0 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 20 µA A VGS = 10 V, ID = 11 A 0.004 VGS = 4.5 V, ID = 10 A 0.005 VDS = 15 V, ID = 11 A 52 VDS = 15 V, VGS = 0 V, f = 1 MHz 195 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 820 73 VDS = 15 V, VGS = 10 V, ID = 11 A VDS = 15 V, VGS = 5 V, ID = 11 A Fall Time Turn-On Delay Time 3.6 24 12 18 16 24 tf 10 20 td(on) 8 16 10 20 tr Rise Time td(off) Turn-Off Delay Time VDD = 15 V, RL = 1.4 Ω ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 15 V, RL = 1.4 Ω ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 2.5 16 td(off) Turn-Off Delay Time 23 10.2 1.8 tr Rise Time 15 6.8 nC 2.3 f = 1 MHz td(on) Turn-On Delay Time pF 0.36 16 24 8 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 25 ISM VSD 50 IS = 9 A 0.8 1.2 A V Body Diode Reverse Recovery Time trr 15 30 ns Body Diode Reverse Recovery Charge Qrr 6 12 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C 8 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 HAT2064R www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 5 VGS = 10 thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 VGS = 3 V 10 TC = - 55 °C 3 2 TC = 25 °C 1 TC = 125 °C 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 3.0 Transfer Characteristics 1200 0.010 VGS = 4.5 V 0.008 900 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.006 VGS = 10 V 0.004 Ciss 600 300 Coss 0.002 Crss 0 0.000 0 10 20 30 40 0 50 6 18 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 11 A ID = 11 A 8 VDS = 15 V 6 VDS = 24 V 4 1.5 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 1.2 VGS = 4.5 V 0.9 2 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge 16 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 HAT2064R www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 0.025 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.0 0.020 TJ = 125 °C 0.015 0.010 TJ = 25 °C 0.005 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 50 2.0 40 Power (W) VGS(th) (V) 1.8 ID = 250 µA 1.6 30 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10- 1 TJ - Temperature (°C) Threshold Voltage Limited by RDS(on)* 100 µA 10 I D - Drain Current (A) 10 100 Single Pulse Power, Junction-to-Ambient 100 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 1 Time (s) 100 600 HAT2064R www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 18 I D - Drain Current (A) 15 12 9 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 6 2.0 5 1.5 Power (W) Power (W) 4 3 1.0 2 0.5 1 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 HAT2064R www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 HAT2064R www.VBsemi.com SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 7 HAT2064R www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) HAT2064R www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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